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Evaluation of optical parameters and characterization of few layer sputtered MoS2 film by spectroscopic ellipsometry

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Abstract

The study involves spectroscopic ellipsometry analysis of sputter deposited few layer MoS2 grown on three different substrates (ITO coated glass, n-silicon and p-silicon) for diverse deposition time. We have investigated optical parameters such as refractive index, extinction coefficient and dielectric constant of MoS2 layers in the visible region of electromagnetic spectrum. For such purpose of investigation we have involved Cauchy dispersion model (for the film deposited on n-silicon and p-silicon) and hybrid of Lorentz and Drude model (for the film deposited on ITO coated glass). Furthermore, comparative analysis at the diverse growth time of 5, 10, 15 and 20 min has been performed on the basis of optical parameters and surface morphology.

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Acknowledgements

The authors are thankful to Material Science and Engineering Department, IIT Kanpur and Centre for Interdisciplinary Research (CIR), MNNIT Allahabad for providing characterization facilities.

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  1. Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj, 211004, India

    Richa Singh & Shweta Tripathi

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  1. Richa Singh
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Singh, R., Tripathi, S. Evaluation of optical parameters and characterization of few layer sputtered MoS2 film by spectroscopic ellipsometry. Opt Quant Electron 51, 326 (2019). https://doi.org/10.1007/s11082-019-2041-3

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