Abstract
Indium bumps are generally accepted to possess functions of electrical connection, mechanical support and heat transfer in flip-chip devices. After comparing the distribution of stress components along different paths in InSb infrared focal plane arrays (IRFPAs), we ascertain that local enhancement effects of the stress components are remarkable in regions where the indium bumps are. More specifically, the local enhanced tensile stress in InSb chip connected with the indium bumps can lead to the local fracture of the InSb chip, and the locally enhanced shear and peeling stresses may give rise to the local interfacial delamination between the InSb chip and the indium bumps. These inferences are confirmed by the observed local failure characteristics, such as the distribution of the local delamination, the distribution of the crack widths, and the distribution of the cracks. In addition, the simulated Z-component strain distribution in InSb IRFPAs is also consistent with the backside surface profile of the InAs/GaSb IRFPAs fabricated in America with the identical structure, that is, the InSb chip glued with the indium bumps is concave downward, and the InSb chip glued with the underfill is convex upward. Judging from all these confirmed simulation results, we are confident that the indium bumps play a pivotal role in inducing the local failure of InSb IRFPAs. So the role of the indium bumps in causing the local failure of InSb IRFPAs needs to be supplemented and emphasized to comprehensively evaluate the structural reliability of InSb IRFPAs.
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Acknowledgements
The research was supported by the Key Scientific Research Projects of Higher Education Institutions in Henan Province (Grant No. 19A510012), by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61505048), and by the Aero Science Foundation of China (20152442001).
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Meng, Q., Zhang, X., Lü, Y. et al. Function reconsideration of indium bump in InSb IRFPAs. Opt Quant Electron 51, 304 (2019). https://doi.org/10.1007/s11082-019-2021-7
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DOI: https://doi.org/10.1007/s11082-019-2021-7