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Influence of Gaussian disorder and exponential traps on charge carriers transport and recombination in single layer polymer light-emitting diodes based on PFO as emitting layer

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Abstract

In this paper, we study the transport and recombination mechanisms of charge carriers in a single layer PLED device based on PFO as emitting layer with considering Gaussian disorder, exponential distribution of traps, Poole–Frankel type field dependent hopping mobility and field independent effective transport hopping energy models. For this purpose, we use the one-dimensional and time-independent drift–diffusion model for simulation of electrical and optical characteristics of the PFO based PLED devices such as current density–luminance–voltage (J–L–V), recombination rate and singlet exciton density profile in steady-state and room temperature conditions. Also, we study the influence of the characteristic temperature and density of electron traps on the performance of devices at different voltages. Another topic is analyzing the current density–voltage characteristics of uni-polar devices (hole only or electron only) by using the well known expressions for trap-limited current and space charge-limited current and comparing them with simulation results.

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  1. Department of Physic, Faculty of Basic Science, University of Mazandaran, Babolsar, Iran

    Aliasghar Ayobi & Seyed Noureddin Mirnia

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  1. Aliasghar Ayobi
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  2. Seyed Noureddin Mirnia
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Correspondence to Aliasghar Ayobi.

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Ayobi, A., Mirnia, S.N. Influence of Gaussian disorder and exponential traps on charge carriers transport and recombination in single layer polymer light-emitting diodes based on PFO as emitting layer. Opt Quant Electron 51, 295 (2019). https://doi.org/10.1007/s11082-019-1997-3

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