Abstract
Thin film of 2-(pyranoquinolin-4-yl) malononitrile, PQM, was deposited on p-Si to fabricate a heterojunction of PQM/Si. Current–voltage characteristics for PQM/p-Si were investigated as a function of temperature. The diode ideality factor was calculated at different temperatures. The mechanisms for current transport in forward and reverse bias were deduced. At low voltage, the thermionic emission is the predominant mechanism of charge transport in PQM/p-Si. While ohmic conduction was observed at the higher voltage in PQM/p-Si. The photovoltaic performance for PQM/p-Si under illumination was studied and the parameters of short circuit photocurrent ISC, open-circuit photovoltage Voc and fill factor FF were calculated.
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Acknowledgements
This work was supported by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jeddah, under Grant No. (363-851-D1435). The authors, therefore, gratefully acknowledge with the DSR technical and financial support.
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Khusayfan, N.M., El-Nahass, M.M. Characterizations of 2-(pyranoquinolin-4-yl) malononitrile/p-silicon heterojunction. Opt Quant Electron 51, 83 (2019). https://doi.org/10.1007/s11082-019-1796-x
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DOI: https://doi.org/10.1007/s11082-019-1796-x