Abstract
Using the finite element method, thermal effects including the maximum temperature, the heat flux and the temperature gradient in the active region of semiconductor disk lasers with front and end pumped geometry are numerically analyzed at the first time. Nanoscale thermal conductivities of the multiple quantum wells and the distributed Bragg reflector are used to overcome the underestimate of the temperature rise which comes from the use of the weighted average of the bulk thermal conductivities in the previous works, and the calculated results are compared with the corresponding experiments. The maximum temperature of quantum wells in active region with end pump is always higher than that with front pump under same pump power. Because of its better mode matching, output powers of the end pumped laser are bigger than that of the front pumped laser when the pump power is relatively lower and the thermal rollover of laser has not happened. In comparison, the front pumped laser can tolerate much bigger pump power and produce much higher output power thanks to its better heat dissipation.
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References
Adachi, S.: Lattice thermal conductivity of group-IV and III–V semiconductor alloys. J. Appl. Phys. 102, 063502 (2007)
Aviles-Espinosa, R., Filippidis, G., Hamilton, C., Malcolm, G., Weingarten, K.J., Südmeyer, T., Barbarin, Y., Keller, U., Santos, S.I.C.O., Artigas, D., Loza-Alvarez, P.: Compact ultrafast semiconductor disk laser targeting GFP based nonlinear applications in living organisms. Biomed. Opt. Express 2, 739–747 (2011)
Butkus, M., Rautiainen, J., Okhotnikov, O.G., Hamilton, C.J., Malcolm, G.G., Mikhrin, S.S., Krestnikov, I.L., Livshits, D.A., Rafailov, E.U.: Quantum dot based semiconductor disk lasers for 1–1.3 μm. IEEE J. Sel. Top. Quantum 17, 1763–1771 (2011)
Cahill, D.G., Ford, W.K., Goodson, K.E., Mahan, G.D., Majumdar, A., Maris, H.J., Merlin, R., Phillpot, S.R.: Nanoscale thermal transport. J. Appl. Phys. 93, 793–818 (2003)
Calvez, S., Hastie, J.E., Guina, M., Okhotnikov, O.G., Dawson, M.D.: Semiconductor disk lasers for the generation of visible and ultraviolet radiation. Laser Photonics Rev. 3, 407–434 (2009)
Chilla, J., Shu, Q.Z., Zhou, H., Weiss, E., Reed, M., Spinelli, L.: Recent advances in optically pumped semiconductor lasers. Proc. SPIE 6451, 645109 (2007)
Corzine, S.W., Geels, R.S., Scott, J.W., Yan, R.H., Coldren, L.A.: Design of Fabry–Perot surface-emitting lasers with a periodic gain structure. IEEE J. Quantum Electron. 25, 1513–1524 (1989)
Gaafar, M.A., Rahimi-Iman, A., Fedorova, K.A., Stolz, W., Rafailov, E.U., Koch, M.: Mode-locked semiconductor disk lasers. Adv. Opt. Photonics 8, 370–400 (2016)
Hader, J., Moloney, J.V., Koch, S.W.: Microscopic evaluation of spontaneous emission and Auger processes in semiconductor lasers. IEEE J. Quantum Electron. 41, 1217–1226 (2005)
Heinen, B., Wang, T.L., Sparenberg, M., Weber, A., Kunert, B., Hader, J., Koch, S.W., Moloney, J.V., Koch, M., Stolz, W.: 106 W continuous-wave output power from vertical-external-cavity surface-emitting laser. Electron. Lett. 48, 516–517 (2012)
Heinen, B., Möller, C., Jandieri, K., Kunert, B., Koch, M., Stolz, W.: The thermal resistance of high-power semiconductor disk lasers. IEEE J. Quantum Electron. 51, 1–9 (2015)
Jacquemet, M., Picqué, N., Guelachvili, G., Garnache, A., Sagnes, I., Strassner, M., Symonds, C.: Continuous-wave 1.55 μm diode-pumped surface emitting semiconductor laser for broadband multiplex spectroscopy. Opt. Lett. 32, 1387–1389 (2007)
Keller, U., Tropper, A.C.: Passively mode locked surface-emitting semiconductor lasers. Phys. Rep. 429, 67–120 (2006)
Kemp, A.J., Valentine, G.J., Hopkins, J.M., Hastie, J.E., Smith, S.A., Calvez, S., Dawson, M.D., Burns, D.: Thermal management in vertical-external-cavity surface-emitting lasers finite-element analysis of a heatspreader approach. IEEE J. Quantum Electron. 41, 148–155 (2005)
Kemp, A.J., Hopkins, J.M., Maclean, A.J., Schulz, N., Rattunde, M., Wagner, J., Burns, D.: Thermal management in 2.3 μm semiconductor disk lasers a finite element analysis. IEEE J. Quantum Electron. 4, 125–135 (2008)
Kim, G.B., Kim, J.Y., Lee, J., Yoo, J., Kim, K.S., Lee, S.M., Cho, S., Lim, S.J., Kim, T., Park, Y.: End-pumped green and blue vertical external cavity surface emitting laser devices. Appl. Phys. Lett. 89, 181106 (2006)
Kuznetsov, M., Hakimi, F., Sprague, R., Mooradian, A.: High-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams. IEEE Photonics Technol. Lett. 9, 1063–1065 (1997)
Kuznetsov, M., Hakimi, F., Sprague, R., Mooradian, A.: Design and characteristics of high-power (> 0.5 W CW) diode-pumped vertical-external-cavity surface- emitting semiconductor lasers with circular TEM00 beams. IEEE J. Sel. Top. Quantum 5, 561–573 (1999)
Lindberg, H., Strassner, M., Gerster, E., Bengtsson, J., Larsson, A.: Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers. IEEE J. Sel. Top. Quantum 11, 1126–1134 (2005)
Men, Y., Wen, F.: Thermal properties of multiple quantum wells used in vertical-external-cavity surface-emitting lasers. Opt. Eng. 54, 076102 (2015)
Mignot, A., Feugnet, G., Schwartz, S., Sagnes, I., Garnache, A., Fabre, C., Pocholle, J.P.: Single-frequency external-cavity semiconductor ring laser gyroscope. Opt. Lett. 34, 97–99 (2009)
Morioka, S.B.: High power optically pumped semiconductor laser applications. Proc. SPIE 7919, 791913 (2011)
Piprek, J., Troger, T., Schroter, B., Kolodzey, J.A.K.J., Ih, C.S.: Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors. IEEE Photonics Technol. Lett. 10, 81–83 (1998)
Rahim, M., Felder, F., Fill, M., Zogg, H.: Optically pumped 5 μm IV–VI VECSEL with Al-heat spreader. Opt. Lett. 33, 3010–3012 (2008)
Rahimi-Iman, A.: Recent advances in VECSELs. J. Opt.-UK 18, 093003 (2016)
Rudin, B., Rutz, A., Hoffmann, M., Maas, D.J.H.C., Bellancourt, A.R., Gini, E., Südmeyer, T., Keller, U.: Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode. Opt. Lett. 33, 2719–2721 (2008)
Schulze, M., Masters, A.: Optically pumped semiconductor lasers expand the scope of potential applications. Laser Focus World 42, 77–79 (2006)
Tropper, A.C., Hoogland, S.: Extended cavity surface-emitting semiconductor lasers. Prog. Quantum Electron. 30, 1–43 (2006)
Wagner, J., Hugger, S., Rösener, B., Fuchs, F., Rattunde, M., Yang, Q., Bronner, W., Aidam, R., Köhler, K., Raab, M., Romasew, E., Romasew, E., Tholl, H.D.: Infrared semiconductor laser modules for DIRCM applications. Proc. SPIE 74830, 74830F (2009)
Yao, T.: Thermal properties of AlAs/GaAs superlattices. Appl. Phys. Lett. 51, 1798–1800 (1987)
Zhang, P., Song, Y., Tian, J., Zhang, X., Zhang, Z.: Gain characteristics of the InGaAs strained quantum wells with GaAs AlGaAs and GaAsP barriers in vertical-external-cavity surface-emitting lasers. J. Appl. Phys. 105, 053103 (2009)
Zhang, P., Jiang, M., Zhu, R., Zhang, D., Song, Y.: Thermal conductivity of GaAs/AlAs distributed Bragg reflectors in semiconductor disk laser comparison of molecular dynamics simulation and analytic methods. Appl. Opt. 56, 4537–4542 (2017)
Acknowledgements
This work is supported by the Chongqing Research Program of Basic Research and Frontier Technology (cstc2015jcyjBX0098, cstc2018jcyjAX0319), the National Natural Science Foundation of China (61575011), and the Foundation for the Creative Research Groups of Higher Education of Chongqing (CXTDX201601016).
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Zhang, P., Jiang, L., Zhu, R. et al. Nanoscale thermal analysis of InGaAs quantum well based semiconductor disk laser with different pump geometry. Opt Quant Electron 51, 26 (2019). https://doi.org/10.1007/s11082-018-1737-0
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DOI: https://doi.org/10.1007/s11082-018-1737-0