Abstract
DJ GaInP/GaAs SC structure was designed by using analytical solar cell model. The electrical parameters (Jsc, Voc, FF and η) were calculated by determining optimum conditions for improving the performance of the SCs. Considering the optimization conditions in design of SC, lattice and current matched DJ GaInP/GaAs SC structure was grown using MBE technique. Alloy composition and lattice constants of each layers in the structure were estimated from measured XRD data. To evaluate of effects on conversion efficiency of different metal contact materials, SC devices were fabricated by photolithographic technique. Two types of front-side electrodes, which included Au and Au/Ti metals, were separately fabricated on devices and denoted as S1 and S2, respectively. Performance of the S1 and S2 were determined using I–V measurements under the AM1.5 illuminations. S2 possesses 4.16% enhancement in conversion efficiency compared to that of S1. The better performance of the S2 can be attributed to having higher Isc and Voc due to higher conductivity of titanium as well as good adhesion on GaAs. In addition, Al2O3/TiO2 anti-reflective coating effect on performance of the S1 and S2 was also investigated. Sputtered anti-reflective layer increased the efficiencies from 14.65 to 15.72% and 15.26 to 16.90% for S1 and S2, respectively.
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Abbasian, S., Sabbaghi-Nadooshan, R.: Design and evaluation of ARC less InGaP/AlGaInP DJ solar cell. Optik 136, 487–496 (2017)
Adachi, S.: Properties of Semiconductor Alloys: Group-IV, III–V and II–VI Semiconductor. Wiley, London (2009)
Arzbin, H., Ghadimi, A.: Efficiency improvement of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized two BSF layer in top and bottom cells. Optik 148, 358–367 (2017)
Ataser, T., Akın, N., Zeybek, O., Ozcelik, S.: Effects of band gap alignment and temperature on device performance of GaInP/Ga(In)As monolithic tandem solar cells. JOAM 18, 785–792 (2016)
Bedair, S.M., Lamorte, M.F.: A two-junction cascade solar-cell structure. Appl. Phys. Lett. 34, 38–39 (1979)
Bertness, K.A., Friedman, D.J., Kibbler, A.E., Kramer, C., Kurtz, S.R., Olson, J.M.: High efficiency GaInP/GaAs tandem solar cells. AIP Conf. Proc. 306, 100–110 (1994)
Campesato, R., Tukiainen, A., Aho, A., Gori, G., Isoaho, R., Greco, E., Guina, M.: 31% European InGaP/GaAs/InGaNAs solar cells for space application. E3S Web Conf. 16, 1–5 (2017)
Castafier, L., Silvestre, S.: Modelling PV Systems using PSpice. Wiley, London (2002)
Cotal, H., Fetzer, C., Boisvert, J., Kinsey, G., King, R., Hebert, P., Yoon, H., Karam, N.: III–V multijunction solar cells for concentrating photovoltaics. Energy Environ. Sci. 2, 174–192 (2009)
Garcıa, I., Rey-Stolle, I., Algora, C.: Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics. J. Phys. D Appl. Phys. 45, 1–8 (2012)
Geisz, J.F., Kurtz, S., Wanlass, M.W., Ward, J.S., Duda, A., Friedman, D.J., Olson, J.M., McMahon, W.E., Moriarty, T.E., Kiehl, J.T.: High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction. Appl. Phys. Lett. (2007). https://doi.org/10.1063/1.2753729
Homier, R., Jaouad, A., Turala, A., Valdivia, C.E., Masson, D., Wallace, S.G., Fafard, S., Arès, R., Aimez, V.: Antireflection coating design for triple-junction III–V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride. IEEE J. Photovolt. 2, 393–397 (2012)
Hossain, M.J., Tiwari, B., Bhattacharya, I.: Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations. Sol. Energy 139, 100–107 (2016)
Jani, O., Honsberg, C., Huang, Y., Song, J., Ferguson, I., Namkoong, G., Trybus, E., Doolittle, A., Kurtz, S.: Design, growth, fabrication and characterization of high-band gap InGaN/GaN solar cells. In: Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on Waikoloa, HI, USA, pp. 20–25 (2006)
Kayes, B.M., Zhang, L., Twist, R., Ding, I.-K., Higashi, G.S.: Flexible thin-film tandem solar cells with > 30% efficiency. IEEE J. Photovolt. 4, 729–733 (2014)
Lei, L., NuoFu, C., YiMing, B., Ming, C., Han, Z., FuBao, G., ZhiGang, Y., XingWang, Z.: Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell. Sci. China Ser. E Technol. Sci. 52, 1176–1180 (2009)
Liu, J.J., Ho, W.J., Lee, Y.Y., Chang, C.M.: Simulation and fabrication of SiO2/graded-index TiO antireflection coating for triple-junction GaAs solar cells by using the hybrid. Thin Solid Films 570, 585–590 (2014)
Nayak, P.P., Dutta, J.P., Mishra, G.P.: Efficient InGaP/GaAs DJ solar cell with double back surface field layer. Eng. Sci. Technol. Int. J. 18, 325–335 (2015)
Ochoa-Martínez, E., Barrutia, L., Ochoa, M., Barrigón, E., García, I., Rey-Stolle, I., Algora, C., Basa, P., Kronome, G., Gabás, M.: Refractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells. Sol. Energy Mater. Sol. Cells 174, 388–396 (2018)
Olsen, G.H., Ettenberg, M., D’AieliO, R.V.: Vapor-grown InGaP/GaAs solar cells. Appl. Phys. Lett. 33, 606–608 (1978)
Olson, J.M., McMahon, W.E., Kurtz, S.: Effect of Sb on the properties of GaInP top cells. In: IEEE 4th World Conference on Photovoltaic Energy Conversion, pp. 1–4 (2006)
Özen, Y., Akın, N., Kınacı, B., Özçelik, S.: Performance evaluation of a GaInP/GaAs solar cell structure with the integration of AlGaAs tunnel junction. Sol. Energy Mater. Sol. Cells 137, 1–5 (2015)
Paxman, M., Nelson, J., Braun, B., Connolly, J., Barnham, K.W.J., Foxon, C.T., Roberts, J.S.: Modeling the spectral response of the quantum well solar cell. J. Appl. Phys. 74, 614–621 (1993)
Saylan, S., Milakovich, T., Hadi, S.A., Nayfeh, A., Fitzgerald, E.A., Dahlem, M.S.: Multilayer antireflection coating design for GaAs0.69P0.31/Si dual-junction solar cells. Sol. Energy 122, 76–86 (2015)
Siyu, L., Xiaosheng, Q.: AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell. J. Semicond. 32, 1–4 (2011)
Vurgaftman, I., Meyer, J.R., Ram-Mohan, L.R.: Band parameters for III–V compound semiconductors and their alloys. J. Appl. Phys. 89, 5815–5875 (2001)
Wheeldon, J.F., Valdivia, C.E., Walker, A.W., Kolhatkar, G., Jaouad, A., Turala, A., Riel, B., Masson, D., Puetz, N., Fafard, S., Ares, R., Aimez, V., Hall, T.J., Hinzer, K.: Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells. Prog. Photovolt. Res. Appl. 19, 442–452 (2010)
Zhang, S., Hadi, H.D., Wang, Y., Liang, B., Tiong, V.T., Ali, F., Zhang, Y., Tesfamichael, T., Wong, L.H., Wang, H.: A precursor stacking strategy to boost open circuit voltage of Cu2ZnSnS4 thin film solar cells. IEEE J. Photovolt. 8(3), 856–863 (2018)
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This work was supported by Development Minister in Turkey under the Project Number 2016K121220.
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Ataser, T., Akin Sonmez, N., Ozen, Y. et al. Developing of dual junction GaInP/GaAs solar cell devices: effects of different metal contacts. Opt Quant Electron 50, 277 (2018). https://doi.org/10.1007/s11082-018-1546-5
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DOI: https://doi.org/10.1007/s11082-018-1546-5