Abstract
We present a mathematical and numerical framework for the optimal design of doping profiles for optoelectronic devices using methods from mathematical optimization. With the goal to maximize light emission and reduce the threshold of an edge-emitting laser, we consider a drift-diffusion model for charge transport and include modal gain and total current into a cost functional, which we optimize in cross sections of the emitter. We present 1D and 2D results for exemplary setups that point out possible routes for device improvement.
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Acknowledgements
This research was partially supported by the German Research Foundation (DFG) via project B4 in SFB 787 and by the Einstein Foundation Berlin (ECMath) via the Matheon projects OT1/OT8. The authors thank P. Farrell, M. Liero, A. Glitzky and T. Koprucki for fruitful discussions.
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 17.
Guest edited by Matthias Auf der Maur, Weida Hu, Slawomir Sujecki, Yuh-Renn Wu, Niels Gregersen, Paolo Bardella.
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Peschka, D., Rotundo, N. & Thomas, M. Doping optimization for optoelectronic devices. Opt Quant Electron 50, 125 (2018). https://doi.org/10.1007/s11082-018-1393-4
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DOI: https://doi.org/10.1007/s11082-018-1393-4