Optical characterization of tin containing novel chalcogen rich glassy semiconductors
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Amorphous thin film materials with different compositions of Se80−xTe20Snx (0 ≤ x ≤ 10) system have been deposited on glass substrates by a well known thermal evaporation technique. Structural characterization of different compositions of aforementioned system has been done by Raman spectroscopy. The optical properties of thin films have been studied in the wavelength range 200–1100 nm by the utilization of the optical absorbance spectra of deposited thin films. To calculate the optical band gap from the optical absorption spectra, we have used Tauc model that follows the mechanism of allowed ‘non-direct electronic transition’. Subsequently, we have determined the energy band gap, metallization criterion and refractive index of thin films of aforesaid system. The variation in optical properties with composition has been interpreted in terms of density of defect states.
KeywordsAmorphous thin films Optical absorbance Optical band gap Extinction coefficient Metallization
NM is thankful to his university for providing grant under the consumable head of DST-Purse programme-(5050). AKS is thankful to CSIR, New Delhi, India for providing financial support. We are also thankful to Department of Metallurgy, IIT BHU, Varanasi for providing SEM facility.
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