Abstract
A rate equation model was used to model the optical filtering properties of injection locked semiconductor lasers. Numerical and experimental results are presented which show the changes in the comb rejection ratio (CRR) of an injection locked single mode laser due to the gain of the slave laser. It was found that there is an optimal slave laser current at which the CRR of the slave laser is largest, and good qualitative agreement is present between the model and experiment. The model was also used to predict the effects of the target carrier’s position on the optical comb. It was found that locking the slave laser to the outer comb lines gave slightly worse CRRs than when locking to the central lines. It is also shown that for comb frequency spacings close to the relaxation oscillation frequency of the slave laser, the obtainable CRR is significantly decreased.
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Alexander, J.K., Morrissey, P.E., Yang, H., Yang, M., Marraccini, P.J., Corbett, B., Peters, F.H.: Monolithically integrated low linewidth comb source using gain switched slotted Fabry-Perot lasers. Opt. Express 24, 7960–7965 (2016)
Corbett, B., McDonald, D.: Single longitudinal mode ridge waveguide 1.3\(\mu\)m Fabry-Perot laser by modal perturbation. Electron. Lett. 31, 2181–2182 (1995)
Cotter, W., Goulding, D., Roycroft, B., O’Callaghan, J., Corbett, B., Peters, F.H.: Investigation of active filter using injection-locked slotted Fabry Perot semiconductor laser. Appl. Opt. 51, 7357–7361 (2012)
Ellis, A.D., Garcia Gunning, F.C.: Spectral density enhancement using coherent WDM. IEEE Photon. Tech. Lett. 17, 504–506 (2005)
Garcia Gunning, F.C., Healy, T., Yang, X., Ellis A.D.: 0.6Tbit/s Capacity and 2bit/s/Hz spectral efficiency at 42.6Gsymbol/s using a single DFB laser with NRZ coherent WDM and polarisation multiplexing. In: CLEO Europe and IQEC 2007 Conference, Optical Society of America (2007)
Lang, R.: Injection locking properties of a semiconductor laser. IEEE J. Quantum Electron. 18, 976–983 (1982)
Lu, Q.Y., Guo, W.H., Phelan, R., Byrne, D., Donegan, J.F., Lambkin, P., Corbett, B.: Analysis of slot characteristics in slotted single-mode semiconductor lasers using the 2-D scattering matrix method. IEEE Photon. Technol. Lett. 18(24), 2605–2607 (2006)
Mogensen, F., Olesen, H., Jacobsen, G.: Locking conditions and stability properties for a semiconductor laser with external light injection. IEEE J. Quantum Electron. 21, 784–793 (1985)
Ó Duill, S.P., Anandarajah, P.M., Smyth, F., Barry, L.P., Seeds, A.J., Chernikov, S.V., Guy, M.J., Taylor, J.R., Siddiqui, A.S.: Injection-locking criteria for simultaneously locking single-mode lasers to optical frequency combs from gain-switched lasers. In: Proceedings of SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, p 100980H (2017)
Peters, F.H., Ellis A.D.: Integrated optical comb source system and method. https://encrypted.google.com/patents/EP2173043A1?cl=en (2008)
Wu, D.S., Richardson, D.J., Slavík, R.: Selective amplification of frequency comb modes via optical injection locking of a semiconductor laser: influence of adjacent unlocked comb modes. In: Proceedings of SPIE 8781, Integrated Optics: Physics and Simulations, p 87810J (2013)
Zhou, R., Shao, T., Gutierrez Pascual, M.D., Smyth, F., Barry, L.P.: Injection locked wavelength de-multiplexer for optical comb-based nyquist WDM system. IEEE Photon. Tech. Lett. 27, 2595–2598 (2015)
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This work was supported by the Science Foundation Ireland under Grant SFI 13/IA/1960.
This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 17.
Guest Edited by Matthias Auf der Maur, Weida Hu, Slawomir Sujecki, Yuh-Renn Wu, Niels Gregersen, Paolo Bardella.
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Shortiss, K.J., Shayesteh, M. & Peters, F.H. Modelling the effect of slave laser gain and frequency comb spacing on the selective amplification of injection locked semiconductor lasers. Opt Quant Electron 50, 49 (2018). https://doi.org/10.1007/s11082-018-1317-3
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DOI: https://doi.org/10.1007/s11082-018-1317-3