Abstract
We discuss the fundamental transparent conducting properties of halogens doped SnO2 rutile systems include the structural, electronic structure, optical and electrical properties. Within this study, we employ the first-principles calculation of the full potential linearized augmented plane wave (FP-LAPW) method based on the density function theory and semiclassical Boltzmann equations. It is found that the halogens substitutional doping cause an expansion of SnO2 lattice constants and low thermodynamic perturbation. The dopants act as shallow donors by creating impurity states at the bottom of the conduction band that lead to blue-shift in the optical transparency. Moreover, the electrical conductivity of SnO2 Rutile is significantly improving by halogens doping. In fact, these results could stimulate the future experimental works for elaborating new generations of the transparent conducting oxides in an optimal way.
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Agekyan, V.T.: Spectroscopic properties of semiconductor crystals with direct forbidden energy gap. Phys. Status Solidi A 43, 11–42 (1977)
Amin, B., Ahmad, M.I., Maqboo, S., Said, G., Ahmad, R.J.: Ab initio study of the bandgap engineering of Al1 − xGaxNAl1 − xGaxN for optoelectronic applications. J. Appl. Phys. 109, 023109 (2011)
Blaha, P., Schwarz, K., Madsen, G.K.H., Kvasnicka, D., Luitz, J.: WIEN2K: an augmented plane wave and local orbitals program for calculating crystal properties. In: Schwarz, K. (ed) Vienna University of Technology, Austria (2001)
Boscarino, S., Crupi, I., Mirabell, S., Simone, F., Terrasi, A.: TCO/Ag/TCO transparent electrodes for solar cells application. Appl. Phys. A 116, 1287–1291 (2014)
Cheng, D., Zhang, M., Chen, J., Yang, C., Zeng, X., Cao, D.: Computer screening of dopants for the development of new SnO2-based transparent conducting oxides. J. Phys. Chem. C 118, 2037–2043 (2014)
Gordon, R.G.: Criteria for choosing transparent conductors. MRS Bull. 25, 52–57 (2000)
Granqvist, C.G.: Transparent conductors as solar energy materials: a panoramic review. Sol. Energy Mater. Sol. Cells 91, 1529–1598 (2007)
Hartnagel, H.L., Das, A.L., Jain, A.K., Jagadish, C.: Semiconducting Transparent Thin Films. Institute of Physics Publishing, Bristol (1995)
Hassan, F.E.H., Alaeddine, A., Zoaeter, M., Rachidi, I.: First-principles investigation of SnO2 at high pressure. Int. J. Mod. Phys. B 19, 4081–4092 (2005)
Jäger, T., Bissig, B., Döbeli, M., Tiwari, A.N., Romanyuk, Y.E.: Thin films of SnO2: F by reactive magnetron sputtering with rapid thermal post annealing. Thin Solid Films 553, 21–25 (2014)
Kim, G.K.H., Lee, S.W., Shin, D.W., Park, C.G.: Effect of antimony addition on electrical and optical properties of tin oxide film. J. Am. Ceram. Soc. 77, 915–921 (1994)
Kim, H., Auyeung, R.C., Pique, Y.: Transparent conducting F-doped SnO2 thin films grown by pulsed laser deposition. Thin Solid Films 516, 5052–5056 (2008)
Liu, C.M., Chen, X.R., Ji, G.F.: First-principles investigations on structural, elastic and electronic properties of SnO2 under pressure. Comput. Mater. Sci. 50, 1571–1577 (2011)
Madsen, G.K.H., Singhb, D.J.: BoltzTraP: a code for calculating band-structure dependent quantities. Comput. Phys. Commun. 175, 67–71 (2006)
Minami, T.: Transparent conducting oxide semiconductors for transparent electrodes. Semicond. Sci. Technol. 20, 35–44 (2005)
Murnaghan, F.D.: The compressibility of media under extreme pressures. Proc. Natl. Acad. Sci. U.S.A. 30, 244–247 (1944)
Muto, Y., Oka, N., Tsukamoto, N., Iwabuchi, Y., Kotsubo, H., Shigesato, Y.: High-rate deposition of Sb-doped SnO2 films by reactive sputtering using the impedance control method. Thin Solid Films 520, 1178–1181 (2011)
Okoye, C.M.I.: Electronic structures and optical properties of Ca5(BO3)3F: a systematical first-principles study. J. Phys.: Condens. Matter 15, 5945 (2003)
Ouerfelli, J., Djobo, S.O., Bernede, J.C., Cattin, L., Morsli, M., Berredjem, Y.: Organic light emitting diodes using fluorine doped tin oxide thin films, deposited by chemical spray pyrolysis, as anode. Mater. Chem. Phys. 112, 198–201 (2008)
Park, J.Y., Zhao, X.G., Gu, H.B.: Synthesis and characterization of SnO2 nanostructure using Bombyx mori (L.) silkworm cocoon as biomass template for photocatalytic reaction. Mater. Lett. 141, 187–190 (2015)
Perdew, J.P., Burke, K., Ernzerhof, M.: Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996)
Qin, G., Li, D., Feng, Z., Liu, S.: First principles study on the properties of p-type conducting In: SnO2. Thin Solid Films 517, 3345–3349 (2009)
Saniz, R., Dixit, H., Lamoen, D., Partoens, B.: Quasiparticle energies and uniaxial pressure effects on the properties of SnO2. Appl. Phys. Lett. 97, 261901 (2010)
Slassi, A.: New potential dopants for BaSnO3-based transparent conducting oxides. Opt. Quant. Electron. 48, 350 (2016a)
Slassi, A.: Ab initio study on the structural, electronic, optical and electrical properties of Mo-, Nb- and Ta-doped rutile SnO2. Opt. Quant. Electron. 48, 160 (2016b)
Sun, J., Wang, H., He, J., Tian, Y.: Ab initio investigations of optical properties of the high-pressure phases of ZnO. Phys. Rev. B 71, 123132 (2005)
Tierney, P., Ennis, T.J., Allen, A., Wright, J.: The role of mid-band gap defect levels in persistent photoconductivity in RF sputtered SnO2 thin films. Thin Solid Films 603, 50–55 (2016)
Tran, T., Blaha, P.: Accurate band gaps of semiconductors and insulators with a semilocal exchange correlation potential. Phy. Rev. Lett. 102, 226401 (2009)
Xu, J., Huang, S., Wang, Z.: First principle study on the electronic structure of fluorine-doped SnO2. Solid State Commun. 149, 527–531 (2009)
Yates, H.M., Evans, P., Sheel, D.W., Nicolay, S., Ding, L., Ballif, C.: The development of high performance SnO2: F as TCOs for thin film silicon solar cells. Surf. Coat. Technol. 213, 167–174 (2012)
Zhang, G., Qin, G., Yu, G., Hu, Q., Fu, H., Shao, C.: Ab initio investigation on a promising transparent conductive oxide, Nb:SnO2. Thin Solid Films 520, 5965–5970 (2012)
Ziman, J.M.: Electrons and Phonons. OxfordUniversity Press, New York (2001)
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Slassi, A., Hammi, M., Oumekloul, Z. et al. Effect of halogens doping on transparent conducting properties of SnO2 rutile: an ab initio investigation. Opt Quant Electron 50, 8 (2018). https://doi.org/10.1007/s11082-017-1262-6
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DOI: https://doi.org/10.1007/s11082-017-1262-6