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Synthesis and properties of AsxTe100−x films prepared by plasma deposition via elemental As and Te

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Abstract

AsxTe100−x chalcogenide films (where x = 30–80 at.%) were synthesized via direct interaction of arsenic and tellurium vapors into low-temperature non-equilibrium RF (40 MHz) plasma discharge at reduced pressure. Phase and structural evolution of AsxTe100−x films were implemented by gradual changing of the ratio of the initial substances in the gas phase. The dependence of the films structure, surface morphology and optical properties on phase and chemical content has been studied.

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Acknowledgements

This work was supported by the Russian Science Foundation Grant 16-12-00038. The X-ray microanalysis and scanning electron microscopy were carried out on the equipment of the Collective Usage Center “New Materials and Resource-saving Technologies.” (Chemistry Research Institute of Lobachevsky State University of Nizhny Novgorod).

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, Nizhniy Novgorod, Russia, 603950

    Leonid Mochalov, Aleksey Nezhdanov & Aleksandr Mashin

  2. Institute for Applied Physics of the Russian Academy of Sciences, Nizhniy Novgorod, Russia

    Askold Strikovskiy & Mikhail Gushin

  3. Nizhny Novgorod State Technical University n.a. R.E. Alekseev, Nizhniy Novgorod, Russia, 603950

    Leonid Mochalov

  4. Department of Chemistry, University of Calabria, P. Bucci-15c, Rende, CS, Italy

    Giuseppe Chidichimo & Giovanni De Filpo

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  1. Leonid Mochalov
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  2. Aleksey Nezhdanov
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  3. Askold Strikovskiy
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  4. Mikhail Gushin
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  5. Giuseppe Chidichimo
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  6. Giovanni De Filpo
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  7. Aleksandr Mashin
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Correspondence to Leonid Mochalov.

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Mochalov, L., Nezhdanov, A., Strikovskiy, A. et al. Synthesis and properties of AsxTe100−x films prepared by plasma deposition via elemental As and Te. Opt Quant Electron 49, 274 (2017). https://doi.org/10.1007/s11082-017-1117-1

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