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Improved design for SOI based evanescently coupled multilayer spot-size converter

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Abstract

We report an improved version of a spot-size converter (SSC) consisting of a silicon nanowire evanescently coupled to a phase-matched Poly-Si multilayer structure. With wider transversal dimensions the multilayer structure expands the mode significantly thus increasing the coupling efficiency with the conventional single-mode fiber. Detailed optimization process of a 17-layer based SSC is discussed and its coupling efficiency with a high-NA fiber of radius 2 μm is obtained as 98% providing only 0.087 dB loss. Vertical alignment tolerance between the optimized SSC and a high-NA fiber of radius 2 μm is also shown. This novel design does not consist of a taper and can be fabricated by using CMOS compatible process. It has a short device length and more relaxed alignment tolerances with the fiber. Full-vectorial and computationally efficient finite element method and the least squares boundary residual method have been used for the analysis and optimization of the proposed structure.

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Acknowledgements

Niharika Kohli would like to acknowledge Erasmus Mundus INTACT, University Grants Commission, India and University of Delhi for the financial support.

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Authors and Affiliations

  1. Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi, 110021, India

    Niharika Kohli & Enakshi K. Sharma

  2. School of Mathematics, Computer Science and Engineering, City, University of London, Northampton Square, London, EC1V 0HB, UK

    B. M. A. Rahman

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  1. Niharika Kohli
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  2. B. M. A. Rahman
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  3. Enakshi K. Sharma
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Correspondence to Niharika Kohli.

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Kohli, N., Rahman, B.M.A. & Sharma, E.K. Improved design for SOI based evanescently coupled multilayer spot-size converter. Opt Quant Electron 49, 229 (2017). https://doi.org/10.1007/s11082-017-1066-8

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