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A high efficient antireflective down-conversion Y2O3:Bi3+, Yb3+ thin films

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Abstract

The high efficient antireflective down-conversion Y2O3:Bi, Yb films have been prepared successfully on Si(100) substrates by pulsed laser deposition (PLD) method, Upon excitation of ultraviolet photon varying from 300 to 400 nm, near-infrared emission of Yb3+ was observed for the film, can be efficiently absorbed by silicon (Si) solar cell. Most interestingly, there is a very low average reflectivity 1.46% for the incident light from 300 to 1100 nm. To the best of our knowledge, this is the lowest reflectance for the down-conversion thin films prepared by cost efficient method. The surface topography of the high efficient antireflective films can be controllably tuned through the substrate template regulation by optimizing process parameters. Besides, the results showed that there is a close relationship between luminescent property and morphology of the film. With the change of the surface morphology, the intensity of Bi3+ and Yb3+ emission peaks increase first and then decrease. The obtained results demonstrate that this film can enhance the Si solar cell efficiency through light trapping and spectrum shifting.

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Acknowledgements

The work was financially supported by the National Natural Science Foundation of China (NSFC) (Grant No. 51472010), the Jing-Hua (No. 2014-JH-L07) and the Foundation on the Creative Research Team Construction Promotion Project of the Beijing Municipal Institution (No. IDHT20140506).

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Authors and Affiliations

  1. College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, China

    Jie Lin, Ru-Zhi Wang, Rui Li, Bo Wang & Hui Yan

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  1. Jie Lin
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  2. Ru-Zhi Wang
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  3. Rui Li
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  4. Bo Wang
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  5. Hui Yan
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Correspondence to Ru-Zhi Wang.

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Lin, J., Wang, RZ., Li, R. et al. A high efficient antireflective down-conversion Y2O3:Bi3+, Yb3+ thin films. Opt Quant Electron 49, 188 (2017). https://doi.org/10.1007/s11082-017-1029-0

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