Abstract
Theoretical analysis of photorefractive GaAs/AlGaAs multiple quantum well structure in a wave-mixing geometry with moving interference pattern is presented. The numerical calculations for arbitrary value of the fringe contrast were carried out by solving material equations within the band transport model with bipolar conductivity. An influence of the modulation depth and the nonlinear transport of hot-electrons on the photorefractive response is examined. Theoretical predictions are compared with the available results of moving grating experiments.
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Jabłoński, B., Wichtowski, M., Ziółkowski, A. et al. Standard model of a photorefractive effect and moving grating wave-mixing in semi-insulating GaAs quantum wells. Opt Quant Electron 49, 182 (2017). https://doi.org/10.1007/s11082-017-1020-9
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DOI: https://doi.org/10.1007/s11082-017-1020-9