Abstract
An investigation is performed into the optical and electronic properties of Al and Ga co-doped ZnO thin films deposited on glass substrates using radio frequency magnetron sputtering (RF-sputtering) and then annealed at temperatures of 200, 300 and 400 °C. The XRD analysis results show that the films have a (002) preferential orientation. However, the intensity of the (002) peak increases with an increasing annealing temperature. Moreover, the optical transmittance increases and the electrical resistivity decreases as the annealing temperature increases.
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The author gratefully acknowledges the financial support provided to this study by the Ministry of Science and Technology, R.O.C. under Contract No. Most 105-2221-E-151-026.
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This article is part of the Topical Collection on Photonic Science and Engineering on the Micro/Nano Scale.
Guest edited by Yen-Hsun Su, Lei Liu, Yiting Yu and Yikun Liu.
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Tsai, TY., Chen, TH., Tu, SL. et al. Effect of annealing temperature on the optoelectronic characteristic of Al and Ga co-doping ZnO thin films. Opt Quant Electron 48, 475 (2016). https://doi.org/10.1007/s11082-016-0745-1
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DOI: https://doi.org/10.1007/s11082-016-0745-1