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Effect of partial replacement of Gd3+ ion on photoluminescence properties of YVO4:Yb3+ phosphor

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Abstract

The materials Y(0.99−x)GdxVO4 :0.01Yb were successfully synthesized by precipitation method varying the concentration of Gd3+ ions from 0 to 0.99 mol. Each was characterize by powder X-ray powder diffraction and surface morphology was studied by scanning electronic microscope. The photoluminescence (PL) properties were studied by spectrophotometers in near infra red (NIR) and ultra violet visible region. The Yb3+ ion doped Yttrium vanadate (YVO4) phosphors can convert a photon of UV region (313 nm) into photons of NIR region (982 nm). The effect of replacement of Yttrium (Y3+) ion by Gadolinium (Gd3+) ion in Yb doped YVO4 phosphor was investigated with help of PL properties. However the unexpected result indicated that this phosphor could not be used as a good downconversion luminescent convertor in front of crystalline silicon solar cell panels to reduce thermalization loss due to spectral mismatch of the solar cells.

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Acknowledgments

One of the authors Niraj S. Sawala is thankful to the Chairman FIST-DST Project, SGBA University, Amravati (MH), PIN-444602 India for providing XRD facility for this work. The author thankful to Dr. M. Krishnan (Head GCTL), Dr. M. Goswami (GCTL) and Dr. P. Nandi (GCTL) BARC, Mumbai (MH) India for providing facility of FLS980 spectrophotometer to study PL in NIR range. The author also thanks to Dr. Prakash R. Somani Applied Science Innovations Pvt. Ltd. Pune, PIN-411041(MH), India for providing the technical and instrumental access of SEM.

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  1. Department of Physics, Sant Gadge Baba Amravati University, Amravati, MH, 444602, India

    N. S. Sawala & S. K. Omanwar

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  1. N. S. Sawala
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  2. S. K. Omanwar
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Correspondence to N. S. Sawala.

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Sawala, N.S., Omanwar, S.K. Effect of partial replacement of Gd3+ ion on photoluminescence properties of YVO4:Yb3+ phosphor. Opt Quant Electron 48, 465 (2016). https://doi.org/10.1007/s11082-016-0740-6

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