Abstract
Quantum well intermixing using single layer ZrO2 capped annealing on InGaAsP/InP MQW has been used to achieve integrated two wavelength photodiode pair. The selective solubility of In and Ga in ZrO2 has been used for bandgap engineering. The top layers of the hetrostructure is chosen by lithography and etching into the same hetrostructure. The regions with lower desired bandgaps are chosen to be of lower Ga content. Comparison of different top layer and anneal conditions with respect to wavelength shift and surface quality is also shown. A uniform F ion implantation performed before the annealing has shown an increase of differential blue shift. Regions with up to a minimum of 60 nm InGaAs top layer have been shown to produce a differential bandgap change of 10 nm with no F ion implantation, and 30 nm with uniform F ion implantation (when annealed at 750 °C for 10 s with 300 nm ZrO2 cap).
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Bhowmick, T., Das, U.: Integrated MQW intermixed InGaAsP/InP waveguide photodiodes. Opt. Quantum Electron. 42(2), 109–120 (2010)
Gareso, P.L., Buda, M., Fu, L., Tan, H.H., Jagadish, C.: Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of In × Ga 1 − x As/InP quantum well structures. Semicond. Sci. Technol. 22(9), 998–992 (2007)
Lin, T., Zhang, H., Sun, H., Yang, C., Lin, N.: Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films. Spec. Top. Issue Wide-Bandgap Semicond. Mater. 29, 150–154 (2015)
Marsh, J.H.: Quantum well intermixing. Semicond. Sci. Technol. 8(6), 1136–1155 (1993)
Park, J.W., Kim, H.S., Kim, J.S., Oh, D.K., Oh, K.R., Yeo, D.H., Kim, S.J.: Intermixing characteristics of strained-InGaAs/InGaAsP multiple quantum well structure using impurity-free vacancy diffusion. Jpn. J. Appl. Phys. 38(11B), L1303 (1999)
Patil, R.N., Subbarao, E.C.: Axial thermal expansion of ZrO2 and HfO2 in the range room temperature to 1400°C. J. Appl. Crystallogr. 2, 281–288 (1969)
Skogen, E.J., Raring, J.W., Morrison, G.B., Wang, C.S., Lal, V., Masanovic, M.L., Coldren, L.A.: Monolithically integrated active components: a quantum-well intermixing approach. IEEE J. Sel. Top. Quantum Electron. 11(2), 343–355 (2005)
Soma, T., Satoh, J., Matsuo, H.: Thermal expansion coefficient of GaAs and InP. Solid State Commun. 42(12), 889–892 (1982)
Sonkar, R.K. Waveguide gratings for CWDM by impurity induced InGaAsP/InP quantum well intermixing, PhD Thesis. Kanpur, India: IIT Kanpur (2011)
Tada, H., Kumpel, A.E., Lathrop, R.E., Slanina, J.B., Nieva, P., Zavracky, P., Miaoulis, I.N., Wong, P.Y.: Thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures. J. Appl. Phys. 87(9), 4189–4193 (2000)
Acknowledgments
Authors thank Dr. U. Das for his advice. The RIE equipment is funded by Department of Science and Technology, India and MJB3 mask aligner by Indian Institute of Technology Kanpur. The help provided by S. Das in SU8 process and beneficial discussions with D. Malik is gratefully acknowledged.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Sadasivan, V., Dagar, S. & Bhowmick, T. InGaAsP/InP integrated waveguide photodetector pair using quantum well intermixing. Opt Quant Electron 48, 382 (2016). https://doi.org/10.1007/s11082-016-0650-7
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11082-016-0650-7