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Robustness analysis of a device concept for edge-emitting lasers based on strained germanium


We consider a device concept for edge-emitting lasers based on strained germanium microstrips. The device features an inhomogeneous tensile strain distribution generated by a SiN stressor deposited on top of the Ge microstrip. This geometry requires a lateral contact scheme and hence a full two-dimensional description. The two-dimensional simulations of the carrier transport and of the optical field, carried out in a cross section of the device orthogonal to the optical cavity, use microscopic calculations of the strained Ge material gain as an input. In this paper we study laser performance and robustness against Shockley–Read–Hall lifetime variations and device sensitivity to different strain distributions.

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This work is supported by the Einstein Center for Mathematics Berlin under projects MATHEON-OT1 (D.P., M.T.) and MATHEON-SE2 (A.G.) and the Deutsche Forschungsgemeinschaft DFG within CRC 787 “Semiconductor Nanophotonics” (T.K.). The authors are very thankful to Klaus Gärtner for many helpful comments and ongoing inspiring discussions.

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Correspondence to Thomas Koprucki.

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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’15.

Guest edited by Julien Javaloyes, Weida Hu, Slawek Sujecki and Yuh-Renn Wu.

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Peschka, D., Thomas, M., Glitzky, A. et al. Robustness analysis of a device concept for edge-emitting lasers based on strained germanium. Opt Quant Electron 48, 156 (2016).

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  • Semiconductor lasers
  • Germanium
  • Strain