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Robustness analysis of a device concept for edge-emitting lasers based on strained germanium

Optical and Quantum Electronics volume 48, Article number: 156 (2016) Cite this article

Abstract

We consider a device concept for edge-emitting lasers based on strained germanium microstrips. The device features an inhomogeneous tensile strain distribution generated by a SiN stressor deposited on top of the Ge microstrip. This geometry requires a lateral contact scheme and hence a full two-dimensional description. The two-dimensional simulations of the carrier transport and of the optical field, carried out in a cross section of the device orthogonal to the optical cavity, use microscopic calculations of the strained Ge material gain as an input. In this paper we study laser performance and robustness against Shockley–Read–Hall lifetime variations and device sensitivity to different strain distributions.

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Acknowledgments

This work is supported by the Einstein Center for Mathematics Berlin under projects MATHEON-OT1 (D.P., M.T.) and MATHEON-SE2 (A.G.) and the Deutsche Forschungsgemeinschaft DFG within CRC 787 “Semiconductor Nanophotonics” (T.K.). The authors are very thankful to Klaus Gärtner for many helpful comments and ongoing inspiring discussions.

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Authors and Affiliations

  1. Weierstrass Institute (WIAS), Mohrenstr. 39, 10117, Berlin, Germany

    Dirk Peschka, Marita Thomas, Annegret Glitzky, Reiner Nürnberg & Thomas Koprucki

  2. Dipartimento di Fisica “E. Fermi”, Università di Pisa, Largo Pontecorvo 3, 56127, Pisa, Italy

    Michele Virgilio

  3. IHP, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany

    Subhajit Guha, Thomas Schroeder & Giovanni Capellini

Authors
  1. Dirk Peschka
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  2. Marita Thomas
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  3. Annegret Glitzky
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  4. Reiner Nürnberg
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  5. Michele Virgilio
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  6. Subhajit Guha
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  7. Thomas Schroeder
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  8. Giovanni Capellini
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  9. Thomas Koprucki
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Corresponding author

Correspondence to Thomas Koprucki.

Additional information

This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’15.

Guest edited by Julien Javaloyes, Weida Hu, Slawek Sujecki and Yuh-Renn Wu.

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Peschka, D., Thomas, M., Glitzky, A. et al. Robustness analysis of a device concept for edge-emitting lasers based on strained germanium. Opt Quant Electron 48, 156 (2016). https://doi.org/10.1007/s11082-016-0394-4

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  • DOI: https://doi.org/10.1007/s11082-016-0394-4

Keywords

  • Semiconductor lasers
  • Germanium
  • Strain