Abstract
This article presents a general method for fabrication of large-area metal nano-wires using laser interference lithography and a lift-off process. A tri-layer resist structure consisting of a thin top photoresist, a metal inter-layer and a thick bottom photoresist is introduced to fabricate thick photoresist nano-patterns. Laser interference lithography is used to pattern the top thin photoresist and the lift-off process is applied to acquire nano-patterns with high duty cycle. Thick photoresist nano-patterns with high duty cycle are fabricated by the reactive ion etching process. Using the thick photoresist nano-patterns, metal nano-wires with a 100 nm square cross-section are successfully fabricated by a lift-off process. The method presented in this article can produce large-area metal nano-wires with high-throughput and low cost, as compared with the traditional method using electron beam lithography. Moreover, laser interface lithography is a maskless lithography method and can fabricate nano-patterns with high uniformity and good period controllability, which makes this method a promising way to manufacture metal nano-wires devices.
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This work was financially supported by the National High Technology Research and Development Program of China (Nos. 2011AA03A112) and the National Natural Science Foundation of China (Nos. 11374340, 11204360 and 61210014).
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Fang, Y., Dai, L., Yang, F. et al. Fabrication of metal nano-wires by laser interference lithography using a tri-layer resist process. Opt Quant Electron 48, 24 (2016). https://doi.org/10.1007/s11082-015-0286-z
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DOI: https://doi.org/10.1007/s11082-015-0286-z