Abstract
The edge-emitting semiconductor laser powered by Sifeu et al. oscillator is studied numerically. An electronic/analog model of the system is constructed in order to imitate the behavior of the material model. Period-doubling to chaos, is obtained when varying the amplitude of the reverse bias saturation current. The experimental results show agreement with those obtained numerically.
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Foutse, M., Woafo, P. Edge-emitting semiconductor laser subject to nonsinusoidal excitation from three-dimensional autonomous system: numerical and electronic models analysis. Opt Quant Electron 47, 3405–3417 (2015). https://doi.org/10.1007/s11082-015-0216-0
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DOI: https://doi.org/10.1007/s11082-015-0216-0