Abstract
We introduce a III-V nanowire waveguide structure on a silicon substrate through III-V to silicon adhesive bonding technology. The proposed waveguide structure provides an omni-directional high-refractive-index contrast which is similar to the conventional silicon-on-insulator nanowire waveguides. The optical confinement factor in the active region of the proposed structure nearly doubles that in the conventional hybrid III-V waveguides with a thick p-InP top cladding layer. Electrical injection is also favored in the proposed structure using two thin lateral contact layers which can be fabricated through a double side patterning process. Passive waveguides are fabricated and measured. Propagation losses of 16.18 and 17.83 dB/mm are extracted for the fundamental transverse-electrical and transverse-magnetic modes, respectively, in the proposed III-V nanowire waveguide of 600 nm width.
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This research is partially supported by “863” project (Ministry of Science and Technology of China, #2012AA012201), National Nature Science Foundation of China (#61107020), and the Guangdong Innovative Research Team Program (#201001D0104799318).
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Cheng, J., Zhu, Y., Zhang, C. et al. Double-side processed III-V nanowire waveguide on a silicon substrate. Opt Quant Electron 47, 3381–3390 (2015). https://doi.org/10.1007/s11082-015-0214-2
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DOI: https://doi.org/10.1007/s11082-015-0214-2