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Theoretical study of polarization effect for AlGaN ultraviolet LEDs with different Al composition

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Abstract

The AlGaN-based ultraviolet light-emitting diodes (UV LEDs) with different Al composition in the multiple quantum well (MQW) active region are investigated numerically. It is manifest that the Al content significantly affects the polarization field in the MQWs, which further have great impact on the current transport mechanisms for different type UV LEDs. The energy band diagrams and electric field in MQWs are simulated to illustrate the devices’ performance theoretically.

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References

  • Baber, N., Scheffler, H., Ostmann, A., Wolf, T., Bimberg, D.: Field effect on electron emission from the deep Ti donor level in InP. Phys. Rev. B 45, 4043–4047 (1992)

  • Bochkareva, N.I., Voronenkov, V.V., Gorbunov, R.I., Zubrilov, A.S., Lelikov, Y.S., Latyshev, P.E., Rebane, Y.T., Tsyuk, A.I., Shreter, Y.G.: Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes. Appl. Phys. Lett. 96, 133502 (2010)

  • Cao, X.A., Teetsov, J.M., D’Evelyn, M.P., Merfeld, D.W., Yan, C.H.: Electrical characteristics of InGaN/GaN light-emitting diodes grown on GaN and sapphire substrates. Appl. Phys. Lett. 85, 7–9 (2004)

  • Chen, K.X., Dai, Q., Lee, W., Kim, J.K., Schubert, F.E., Grandusky, J., Mendrick, M., Li, X., Smart, J.A.: Effect of dislocation on electrical and optical properties of n-type \(\text{ Al }_{0.34}\text{ Ga }_{0.66}\text{ N }\). Appl. Phys. Lett. 93, 192108 (2008)

  • Fiorentini, V., Bernardini, F., Sala, F.D., Carlo, A.D., Lugli, P.: Effects of macroscopic polarization in III-V nitride multiple quantum wells. Phys. Rev. B 60, 8849–8858 (1999)

    Article  ADS  MATH  Google Scholar 

  • Ganichev, S.D., Ziemann, E., Prettl, W., Yassievich, I.N., Istratov, A.A., Weber, E.R.: Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors. Phys. Rev. B 61, 10361–10365 (2000)

  • Hu, X., Deng, J., Zhang, J.P., Lunev, A., Bilenko, Y., Katona, T., Shur, M.S., Gaska, R., Shatalov, M., Khan, A.: Deep ultraviolet light-emitting diodes. Phys. Status Solidi (A) 203, 1815–1818 (2006)

    Article  ADS  Google Scholar 

  • Masui, H., Asamizu, H., Melo, T., Yamada, H., Iso, K., Cruz, S.C., Nakamura, S., DenBaars, S.P.: Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (10–10) and semipolar (11–22) orientations. J. Phys. D Appl. Phys. 42, 135106 (2009)

  • Piprek, J., Moe, C., Keller, S., Nakamura, S., Denbaars, S.P.: Internal efficiency analysis of 280 nm light emitting diodes. Proc. SPIE 5594, 177–184 (2004)

    Article  ADS  Google Scholar 

  • Shan, Q., Meyaard David, S., Dai, Q., Cho, J., Schubert, E.F., Son, J.K., Sone, C.: Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes. Appl. Phys. Lett. 99, 253506 (2011)

  • Shatalov, M., Sun, W., Lunev, A., Hu, X., Dobrinsky, A., Bilenko, Y., Yang, J., Shur, M., Gaska, R., Moe, C., Garrett, G., Wraback, M.: AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%. Appl. Phys. Exp. 5, 082101 (2012)

  • Simon, J., Protasenko, V., Lian, C.X., Xing, H.L., Jena, D.: Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science 327, 60–64 (2010)

    Article  ADS  Google Scholar 

  • Vurgaftman, I., Meyer, J.R., Ram-Mohan, L.R.: Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89, 5815–5875 (2011)

    Article  ADS  Google Scholar 

  • Yang, G.F., Li, G.H., Gao, S.M., Yan, D.W., Wang, F.X.: Characteristics of N-face light-emitting diodes with p-type InGaN/GaN superlattice. IEEE Photonics Technol. Lett. 25, 2369–2372 (2013)

    Article  ADS  Google Scholar 

  • Yang, G.F., Xie, F., Dong, K.X., Chen, P., Xue, J.J., Zhi, T., Tao, T., Liu, B., Xie, Z.L., Xiu, X.Q., Han, P., Shi, Y., Zhang, R., Zheng, Y.D.: Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells. Phys. E 62, 55–58 (2014)

    Article  Google Scholar 

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Acknowledgments

This work is supported by the Scientific and Technological Research Project of the “12th Five-Year Plan” of Jilin Provincial Education Department under Grant No. 2013189.

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  1. College of Physics, Beihua University, Jilin, 132013, China

    Lili Gao

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  1. Lili Gao
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Correspondence to Lili Gao.

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Gao, L. Theoretical study of polarization effect for AlGaN ultraviolet LEDs with different Al composition. Opt Quant Electron 47, 1941–1948 (2015). https://doi.org/10.1007/s11082-014-0061-6

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  • DOI: https://doi.org/10.1007/s11082-014-0061-6

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