Abstract
Au/reduced graphene:poly(3-hexylthiophene) (P3HT) nanocomposite/p-Si/Al diodes have been prepared and their electrical characteristics have been investigated using current–voltage, capacitance–voltage and conductance–voltage measurements. The electronic parameters such as ideality factor (n) and barrier height (\(\Phi _{\mathrm{B}0})\) were determined. The photocurrent of the diodes is higher than their dark current. This indicates that the diodes exhibited a photoconducting behavior under various illumination conditions. The diode having molar ratio of RG:P3HT \(=\) 0.005 gives the highest photoresponsivity. This diode was analyzed in detail. The prepared Au/ RG:P3HT nanocomposite/p-Si/Al diode can be used as a solar position sensor for two axes tracking systems, a light meter, a sunlight detector and automatic shutter control sensor.
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This paper was funded by King Abdulaziz University, under Grant No. (9-130-1434-HiCi). Authors, therefore, acknowledge technical and financial support of KAU.
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Wageh, S., Al-Ghamdi, A.A., Al-Turki, Y. et al. Electrical and photoresponse properties of Au/ reduced graphene:poly(3-hexylthiophene) nanocomposite /p-Si photodiodes. Opt Quant Electron 47, 1779–1789 (2015). https://doi.org/10.1007/s11082-014-0035-8
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DOI: https://doi.org/10.1007/s11082-014-0035-8