Optical and Quantum Electronics

, Volume 46, Issue 1, pp 209–219 | Cite as

Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN

  • N. Benyahya
  • H. Mazari
  • N. Benseddik
  • Z. Benamara
  • M. Mostefaoui
  • K. Ameur
  • R. Khelifi
  • J. M. Bluet
  • W. Chikhaoui
  • C. Bru-Chevallier
Article
First Online:
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Accepted:

Abstract

In this paper, we have studied the Schottky contact of two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs. The current–voltage Igs(Vgs) of AlInN/GaN and AlGaN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3 and 1.96), barrier height (0.72 and 0.71 eV) and series resistance (33 and 153 \(\Omega \)) were evaluated from I–V data. The comparison of the performance of the two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs have been analyzed and discussed.

Keywords

GaN AlInN AlGaN Electrical characterization HEMT transistor 

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • N. Benyahya
    • 1
  • H. Mazari
    • 1
  • N. Benseddik
    • 1
  • Z. Benamara
    • 1
  • M. Mostefaoui
    • 1
  • K. Ameur
    • 1
  • R. Khelifi
    • 1
  • J. M. Bluet
    • 2
  • W. Chikhaoui
    • 2
  • C. Bru-Chevallier
    • 2
  1. 1.Laboratoire de Microélectronique Appliquée, Départementd’électroniqueUniversité Djillali LiabèsSidi Bel- AbbesAlgeria
  2. 2.Institut des NanotechnologiesUniversité de LyonLyonFrance

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