Abstract
In this paper, we have studied the Schottky contact of two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs. The current–voltage Igs(Vgs) of AlInN/GaN and AlGaN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3 and 1.96), barrier height (0.72 and 0.71 eV) and series resistance (33 and 153 \(\Omega \)) were evaluated from I–V data. The comparison of the performance of the two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs have been analyzed and discussed.
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Benyahya, N., Mazari, H., Benseddik, N. et al. Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN. Opt Quant Electron 46, 209–219 (2014). https://doi.org/10.1007/s11082-013-9747-4
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DOI: https://doi.org/10.1007/s11082-013-9747-4