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Large signal analysis of double quantum well transistor laser

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Abstract

In this paper, we present an analytical model for the large-signal analysis of the double quantum well (DQW) transistor laser. Our model is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. By using the presented model, effects of barrier width on DQW transistor laser static and dynamic performances are investigated. Also the static and dynamic responses of DQW transistor lasers are compared with single quantum well ones. Simulation results are in agreement with the numerical and experimental results reported by other researchers.

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Authors and Affiliations

  1. Young Researchers Club, Arak Branch, Islamic Azad University, Arak, Iran

    Ashkan Horri

  2. Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran

    Rahim Faez

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  1. Ashkan Horri
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  2. Rahim Faez
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Correspondence to Ashkan Horri.

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Horri, A., Faez, R. Large signal analysis of double quantum well transistor laser. Opt Quant Electron 45, 389–399 (2013). https://doi.org/10.1007/s11082-012-9641-5

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  • DOI: https://doi.org/10.1007/s11082-012-9641-5

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