Skip to main content
Log in

Large signal analysis of double quantum well transistor laser

Optical and Quantum Electronics Aims and scope Submit manuscript

Cite this article


In this paper, we present an analytical model for the large-signal analysis of the double quantum well (DQW) transistor laser. Our model is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. By using the presented model, effects of barrier width on DQW transistor laser static and dynamic performances are investigated. Also the static and dynamic responses of DQW transistor lasers are compared with single quantum well ones. Simulation results are in agreement with the numerical and experimental results reported by other researchers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11


  • Belyanin, A., Kocharovsky, V., Kocharovsky, V.l., Scully, M.: Three-terminal semiconductor laser for wave mixing. Phys. Rev. A. 65(5), 053824-1–053824-4 (2002)

    Google Scholar 

  • Coldren, L.A., Corizne, S.W.: Diode Lasers and Photonic Integrated Circuits. Wiley, New York (1995)

    Google Scholar 

  • Faraji, B., Shi, W., Pulfrey, D.L., Chrostowski, L.: Analytical modeling of the transistor laser. IEEE J. Sel. Topics Quantum Electron 15(3), 594–603 (2009)

    Article  Google Scholar 

  • Feng, M., Holonyak Jr. N., James, A., Cimino, K., Walter, G., Chan, R.: Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser. Appl. Phys. Lett. 89(11), 113504-1–113504-3 (2006)

  • Feng, M., Holonyak Jr, N., Then, H.W., Walter, G.: Charge control analysis of transistor laser operation. Appl. Phys. Lett. 91(5), 053501-1–053501-3 (2007)

  • Horri, A., Mirmoeini, S. Z., Faez, R.: The noise equivalent circuit model of quantum dot lasers. J. Russ. Laser Res., 33(3), 217–226 (2012)

    Google Scholar 

  • Horri, A., Mirmoeini, S.Z., Faez, R.: Analysis of carrier dynamic effects in transistor lasers. Opt. Eng. 51(2), 024202-1–024202-6 (2012)

    Google Scholar 

  • Nagarajan, R., Ishikawa, M., Fukushima, T., Geels, R. S., Bowers, J. E.: High speed quantum-well lasers and carrier transport effects. IEEE J. Quantum Electron, 28(10), 1990–2008 (1992)

    Google Scholar 

  • Shibata, J., Mori, Y., Sasai, Y., Hase, N., Serizawa, H., Kajiwara, T.: Fundamental characteristics of an InGaAsP/InP laser transistor. Electron. Lett. 21(3), 98–100 (1985)

    Article  ADS  Google Scholar 

  • Shirao, M., Lee, S.H., Nishiyama, N., Arai, S.: Large-signal analysis of a transistor laser. IEEE J. Quantum Electron 47(3), 359–367 (2011)

    Article  ADS  Google Scholar 

  • Taghavi, I., Kaatuzian, H., Leburton, J.P.: Bandwidth enhancement and optical Performances of multiple quantum well transistor lasers. Appl. Phys. Lett. 100, 231114-1–231115-5 (2012)

    Google Scholar 

  • Walter, G., Holonyak, N., Feng, M., Chan, R.: Laser operation of a heterojunction bipolar light-emitting transistor. Appl. Phys. Lett. 85(20), 4768–4770 (2004)

    Google Scholar 

Download references

Author information

Authors and Affiliations


Corresponding author

Correspondence to Ashkan Horri.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Horri, A., Faez, R. Large signal analysis of double quantum well transistor laser. Opt Quant Electron 45, 389–399 (2013).

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: