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Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers

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Abstract

An effective BSF is a key structural element for an efficient solar cell, either in a multi-junction or in a single-junction device. In this paper, two important materials AlGaAs and InAlGaP with their varied thickness (i.e. 0.05–1.0) μm both for top BSF and bottom BSF cells are investigated using the computational numerical modeling TCAD tool Silvaco ATLAS. It has been found that under the current matching condition with the relatively thinner (30 nm) top BSF layer and the thicker (1,000 nm) bottom BSF layer, the cell exhibit an overall enhancement of short-circuit current density Jsc and open circuit voltage Voc thereby improving the overall efficiency of the cell. A wide band gap material In0.5(Al0.7 Ga0.3)0.5P is proved to be a better choice for both window and BSF layer by increasing 6.2% more efficiency than using other widely used Al0.7 Ga0.3 As material under the same cell configuration because of its high photo generation rate. For this optimized cell structure, the maximum Jsc = 16.10 mA/cm2, Voc = 2.392V, and fill factor = 87.52% are obtained under AM1.5G illumination, exhibiting a maximum conversion efficiency of 32.1964% (1 sun) and 36.6781% (1,000 suns). This work reports the Influence of different BSF material and structures on the characteristics and efficiency of Multi-Junction solar cells. The detail photo-generation rates and EQE in this optimized ARC less DJ solar cell structure are also observed. The major stages of the modeling are explained and the simulation results are validated with published experimental data to demonstrate the accuracy of our results produced by the model utilizing this technique.

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  1. Department of Electronics and Communication Engineering, Manipur Institute of Technology, Imphal, 795004, India

    Khomdram Jolson Singh

  2. Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata, 700032, India

    Subir Kumar Sarkar

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  1. Khomdram Jolson Singh
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  2. Subir Kumar Sarkar
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Correspondence to Khomdram Jolson Singh.

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Singh, K.J., Sarkar, S.K. Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers. Opt Quant Electron 43, 1–21 (2012). https://doi.org/10.1007/s11082-011-9499-y

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