Abstract
Numerical model is developed for modeling pulsed operation of a vertical external cavity semiconductor laser (VECSEL) with a resonant gain structure. Properties of optical modes for compound resonator formed by Bragg reflector, chip boundary and external spherical mirror were studied. For above threshold operation carrier density in each of quantum wells (QW) obeys non-linear diffusion equation with a source supplied by electron-hole pairs generated in barrier layers by pump radiation or fast electron beam. A new iteration procedure for round-trip operator evaluation was developed, which provides linear growth of computation time with the number of QWs. Results of numerical simulations are reported for a VECSEL comprising 25 QW in resonant configuration and the output spherical mirror with curvature radius 3 cm. Variation of distance to the external mirror is found to result in notable changes in power and optical quality of the output beam. The decisive role of gain and index non-linearity in these changes is identified. A range of values of distance to external mirror is found where iterative procedure does not converge. In another range, the resulting solution depends on the initial conditions for the iteration procedure.
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Napartovich, A.P., Elkin, N.N. & Vysotsky, D.V. Modeling of vertical external cavity semiconductor laser with MQW resonant structure. Opt Quant Electron 42, 765–770 (2011). https://doi.org/10.1007/s11082-011-9476-5
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DOI: https://doi.org/10.1007/s11082-011-9476-5