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Modeling of polarization effects in InGaN PIN solar cells

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Abstract

In this paper, we study the effect of polarization on the performance of InGaN solar cells. By using the APSYS software, we show that the performance of common device designs is adversely affected by the interface charges between the contact layers and absorber. An improved design based on graded layers in the \({[0 0 0\overline{1}]}\) or N-face growth direction is shown to be almost immune to these effects.

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Authors and Affiliations

  1. Crosslight Software Inc., 121-3989 Henning Dr, Burnaby, BC, V5C 6P8, Canada

    M. Lestrade, Z. Q. Li, Y. G. Xiao & Z. M. Simon Li

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  1. M. Lestrade
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  2. Z. Q. Li
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  3. Y. G. Xiao
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  4. Z. M. Simon Li
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Correspondence to M. Lestrade.

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Lestrade, M., Li, Z.Q., Xiao, Y.G. et al. Modeling of polarization effects in InGaN PIN solar cells. Opt Quant Electron 42, 699–703 (2011). https://doi.org/10.1007/s11082-011-9458-7

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  • DOI: https://doi.org/10.1007/s11082-011-9458-7

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