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Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser

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Abstract

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, The University of British Columbia, Vancouver, BC, Canada

    Wei Shi, Behnam Faraji, Mark Greenberg & Lukas Chrostowski

  2. School of Information and Communication Technology (ICT), The Royal Institute of Technology (KTH), 16440, Kista, Sweden

    Jesper Berggren, Yu Xiang & Mattias Hammar

  3. Crosslight Software Inc., 121-3989 Henning Dr., Burnaby, BC, V5C 6P8, Canada

    Michel Lestrade, Zhi-Qiang Li & Z. M. Simon Li

Authors
  1. Wei Shi
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  2. Behnam Faraji
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  3. Mark Greenberg
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  4. Jesper Berggren
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  5. Yu Xiang
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  6. Mattias Hammar
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  7. Michel Lestrade
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  8. Zhi-Qiang Li
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  9. Z. M. Simon Li
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  10. Lukas Chrostowski
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Corresponding author

Correspondence to Lukas Chrostowski.

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Shi, W., Faraji, B., Greenberg, M. et al. Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser. Opt Quant Electron 42, 659–666 (2011). https://doi.org/10.1007/s11082-011-9444-0

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  • DOI: https://doi.org/10.1007/s11082-011-9444-0

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