Abstract
Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer (EBL). The simulations show a strong influence of the EBL acceptor density on the droop. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.
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Piprek, J., Li, S. Electron leakage effects on GaN-based light-emitting diodes. Opt Quant Electron 42, 89–95 (2010). https://doi.org/10.1007/s11082-011-9437-z
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DOI: https://doi.org/10.1007/s11082-011-9437-z