Abstract
The Poynting vector and the full-vectorial H and E-field profiles are considered for use in nanoscale silicon waveguides in this article. This paper reveals that the mode profile of a circular silicon nanowire is not circular and also has a strong axial field component. From the analysis, the characteristics of single mode operation and the vector field profiles of both circular and planar silicon nanowires are presented. The modal birefringence of rectangular silicon nanowires and power density in low-index region of a slot-type waveguide and designs of a compact polarization rotator are also presented in this work.
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Leung, D.M.H., Rahman, B.M.A., Kejalakshmy, N. et al. Characterization of silicon nanophotonic devices using the finite element method. Opt Quant Electron 42, 499–509 (2011). https://doi.org/10.1007/s11082-010-9425-8
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DOI: https://doi.org/10.1007/s11082-010-9425-8