Abstract
This work discusses the fabrication of two-dimensional photonic crystal mask layer patterns. Photonic crystal patterns having holes with smooth and straight sidewalls are achieved by optimizing electron beam exposure doses during electron beam lithography process. Thereafter, to precisely transfer the patterns from the beam resist to the SiO2 mask layer, we developed a pulse-time etching method and optimize various reaction ion etching conditions. Results show that we can obtain high quality two-dimensional photonic crystal mask layer patterns.
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Peng, YS., Xu, B., Ye, XL. et al. Fabrication of high quality two-dimensional photonic crystal mask layer patterns. Opt Quant Electron 41, 151 (2009). https://doi.org/10.1007/s11082-009-9336-8
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DOI: https://doi.org/10.1007/s11082-009-9336-8