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Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

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Abstract

Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p+-region. Simulation results of 2D electric field and impact ionization rate profile, current-voltage, capacitance-voltage and bandwidth-gain characteristics are discussed.

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References

  • Haralson J.N., Parks J.W., Brennan K.F., Clark W., Tarof L.E.: Numerical simulation of avalanche breakdown within InP-InGaAs SAGCM standoff avalanche photodiodes. J. Light. Technol. 15, 2137–2140 (1997)

    Article  ADS  Google Scholar 

  • Haralson J.N. II, Brennan K.F.: Novel edge suppression technique for planar avalanche photodiodes. IEEE J. Quantum Electron. 35, 1863–1869 (1999)

    Article  ADS  Google Scholar 

  • Liu Y., Forrest S.R., Hladky J., Lange M.J., Olsen G.H., Ackley D.E.: A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction. J. Light. Technol. 10, 182–193 (1992)

    Article  ADS  Google Scholar 

  • Malyshev, S., Chizh, A., Vasileuski, Y.: Mixed device/circuit model of the high-speed p-i-n photodiode. In: Proceedings of 5th International Conference on Numerical Simulation of Optoelectronic Devices, 19–22 Sept. 2005, pp. 45–46. Berlin (2005)

  • Malyshev, S., Chizh, A., Vasileuski, Y.: Numerical simulation of guardring-free planar InP/InGaAs avalanche photodiode. In: Proceedings of 2007 International Conference on EUROCON, 9–12 Sept. 2007, pp. 2047–2050. Warsaw (2007)

  • Malyshev, S., Chizh, A., Vasileuski, Y.: 2D simulation of planar InP/InGaAs avalanche photodiode with no guard rings. In: Proceedings of 8th International Conference on Numerical Simulation of Optoelectronic Devices, 1–9 Sept., pp. 81–82. Nottingham (2008)

  • Saleh M.A., Hayat M.M., Sotirelis P.P., Holmes A.L., Campbell J.C., Saleh B.E.A., Teich M.C.: Impact-ionization and noise characteristics of thin III-V avalanche photodiodes. IEEE Trans. Electron Devices 48, 2722–2731 (2001)

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Logoiski trakt 22, 220090, Minsk, Republic of Belarus

    Yury Vasileuski, Sergei Malyshev & Alexander Chizh

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  1. Yury Vasileuski
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  2. Sergei Malyshev
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  3. Alexander Chizh
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Correspondence to Alexander Chizh.

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Vasileuski, Y., Malyshev, S. & Chizh, A. Design considerations for guardring-free planar InGaAs/InP avalanche photodiode. Opt Quant Electron 40, 1247–1253 (2008). https://doi.org/10.1007/s11082-009-9324-z

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  • DOI: https://doi.org/10.1007/s11082-009-9324-z

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