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Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate

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Abstract

In this paper, we calculate the band gap and the band discontinuities of a GaN y AsBi x structure lattice matched to GaAs substrate using the conduction and the valence band anticrossing models at the same time. The results obtained show a good agreement with experiment. The nitrogen and the bismuth concentrations leading to a wavelength emission of 1.55 μm have been determined (x = 3.5%, y = 2%). This structure shows a good electron confinement resulting in a high characteristic temperature.

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Authors and Affiliations

  1. Department of Electronics, University of Blida, B.P. 270, Blida, Algeria

    Said Nacer, Abdelkader Aissat & Kais Ferdjani

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  1. Said Nacer
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  2. Abdelkader Aissat
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  3. Kais Ferdjani
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Correspondence to Said Nacer.

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Nacer, S., Aissat, A. & Ferdjani, K. Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate. Opt Quant Electron 40, 677–683 (2008). https://doi.org/10.1007/s11082-008-9255-0

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  • DOI: https://doi.org/10.1007/s11082-008-9255-0

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