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Simulation of characteristics of broadband quantum dot lasers

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Abstract

Authors theoretically present the characterization of the multiple states broadband InGaAs/GaAs quantum-dot lasers that agrees well with the measured data. Based on the derived model, this new class of semiconductor laser is further characterized theoretically to gain an idea of the derivative characteristic such as linewidth enhancement factor in providing a picture of the competency of this novel device for diverse applications.

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Author notes

  1. H. S. Djie

    Present address: JDS Uniphase Corporation, San Jose, CA, 95134, USA

Authors and Affiliations

  1. Center for Optical Technologies and Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, 18015, USA

    C. L. Tan, Y. Wang, H. S. Djie & B. S. Ooi

Authors
  1. C. L. Tan
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  2. Y. Wang
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  3. H. S. Djie
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  4. B. S. Ooi
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Correspondence to B. S. Ooi.

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Tan, C.L., Wang, Y., Djie, H.S. et al. Simulation of characteristics of broadband quantum dot lasers. Opt Quant Electron 40, 391–395 (2008). https://doi.org/10.1007/s11082-008-9225-6

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  • DOI: https://doi.org/10.1007/s11082-008-9225-6

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