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Large-signal simulation of semiconductor lasers on device level: numerical aspects of the harmonic balance method

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Abstract

Large-signal modulation characteristics are key specifications in analog and digital applications of optoelectronic devices. In this work we present a novel approach for the modeling of these characteristics for semiconductor lasers on device level. A multi-tone harmonic balance method for a physics-based electro-thermal-optical model is utilized. The numerical aspects of the framework are described and illustrated for a realistic VCSEL example.

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Authors and Affiliations

  1. Synopsys Switzerland LLC, 8050, Zurich, Switzerland

    Bernhard Schmithüsen & Stefan Odermatt

  2. ETH Zurich, 8092, Zurich, Switzerland

    Bernd Witzigmann

Authors
  1. Bernhard Schmithüsen
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  2. Stefan Odermatt
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  3. Bernd Witzigmann
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Correspondence to Bernhard Schmithüsen.

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Schmithüsen, B., Odermatt, S. & Witzigmann, B. Large-signal simulation of semiconductor lasers on device level: numerical aspects of the harmonic balance method. Opt Quant Electron 40, 355–360 (2008). https://doi.org/10.1007/s11082-008-9200-2

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  • DOI: https://doi.org/10.1007/s11082-008-9200-2

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