Abstract
The two-dimensional quantum well laser simulator Visible Laser Simulator (VLS) has been extended to simulate III–V nitride based lasers. In this paper, we present details about the laser simulator and focus on the six band k.p solver used to calculate the electronic band structure. The effect of strain on bulk and quantum well electronic dispersion is analyzed, and the influence of the built-in polarization charges on the band diagram is likewise considered.
Similar content being viewed by others
References
Chuang, S.L., Chang, C.S.: k.p method for strained wurtzite semiconductors. Phys. Rev. B. 54, 2491–2504 (1996)
Grupen, M.: The self-consistent simulation of carrier transport and its effect on the modulation response in semiconductor quantum well lasers. Dissertation, University of Illinois at Urbana-Champaign (1994)
Grupen, M., Hess, K.: Simulation of carrier transport and nonlinearities in quantum-well laser diodes. IEEE J. Quantum. Electr. 34, 120–140 (1998)
Karpov, S. Yu.: Visible light-emitting diodes. In: Piprek, J. (ed.) Nitride Semiconductor Devices: Principles and Simulation, pp. 303–309. Wiley-VCH (2007)
Löwdin, P.: A note on the quantum-mechanical perturbation theory. J. Phys. Chem. 19, 1396–1401 (1951)
Morkoç, H.: Nitride Semiconductors and Devices. Springer, Berlin (1999)
Nakamura, S., Fasol, G.: The Blue Green Diode. Springer, Berlin (1997)
Oyafuso, F., von Allmen, P., Grupen, M., Hess, K.: Gain calculation in a quantum well laser simulator using an eight band k.p model. VLSI Design 6, 367–371 (1998a)
Oyafuso, F., von Allmen, P., Grupen, M., Hess, K.: Inclusion of bandstructure and many-body effects in a quantum well laser simulator. VLSI Design. 8, 463–468 (1998b)
Piprek, J., Nakamura, S.: Physics of high-power InGaN/GaN lasers. IEEE Proc. -Optoelectron. 149, 145–151 (2002)
Song, G.H.: Two-dimensional simulation of quantum-well lasers including energy transport. Dissertation, University of Illinois at Urbana-Champaign (1990)
Yeo, Y. C., Chong, T. C., Li, M. F., Fan, W. J.: Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers. J. Appl. Phys. 84, 1813–1819 (1998)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Venkatachalam, A., Yoder, P.D., Klein, B. et al. Nitride band-structure model in a quantum well laser simulator. Opt Quant Electron 40, 295–299 (2008). https://doi.org/10.1007/s11082-008-9199-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11082-008-9199-4