Abstract
The room-temperature third order nonlinearities in GaAs/AlGaAs multiple quantum wells have been studied using reflection Z-scan technique. Band-filling effect is considered to be the major nonlinear mechanism of the nonlinear absorption. A model to calculate the absorption coefficient of quantum wells in the nonlinear regime is presented.
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Liu, R., Shu, Y., Zhang, G. et al. Study of nonlinear absorption in GaAs/AlGaAs multiple quantum wells using the reflection Z-scan. Opt Quant Electron 39, 1207–1214 (2007). https://doi.org/10.1007/s11082-008-9188-7
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DOI: https://doi.org/10.1007/s11082-008-9188-7