Abstract
Strain-compensated InGaN quantum wells with tensile AlGaN barriers are analyzed as improved gain media for laser diodes emitting at 420–500 nm. The band structure is calculated using the 6-band k ·p formalism, taking into account valence band mixing, strain effect, and spontaneous and piezoelectric polarizations. The optical gain analysis exhibits significant improvement in the peak optical gain and differential gain for the strain-compensated structures. The calculation also shows a significant reduction of threshold carrier density and current density for diode lasers employing the strain-compensated InGaN–AlGaN QW active regions.
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Arif, R.A., Ee, Y.K., Tansu, N.: Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Appl. Phys. Lett. 91, 091110 (2007)
Bernardini, F., Fiorentini, V.: Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences. Phys. Stat. Sol. (B) 216, 391 (1999)
Chuang, S.L.: Optical gain of strained wurtzite GaN quantum-well lasers. IEEE J. Quantum Electron. 32, 1791 (1996)
Guo, X., Li, Y.L., Schubert, E.F.: Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry. Appl. Phys. Lett. 79, 1936 (2001)
Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., Mukai, T.: Superbright green InGaN single-quantum-well-structure light-emitting diodes. Jpn. J. Appl. Phys. 34, L1332 (1995)
Piprek, J.: Semiconductor Optoelectronic Devices. Academic Press (2003)
Vurgaftman, I., Meyer, J.R.: Band parameters for nitrogen-containing semiconductors. J. Appl. Phys. 94, 3675 (2003)
Vurgaftman, I., Meyer, J.R.: Electron bandstructure parameters. In: Piprek, J. (ed.), Nitride semiconductor devices (Chapter 2). Wiley (2007)
Zhang, J., Yang, J., Simin, G., Shatalov, M., Khan, M.A., Shur, M.S., Gaska, R.: Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers. Appl. Phys. Lett. 77, 2668 (2000)
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Zhao, H., Arif, R.A., Ee, YK. et al. Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm. Opt Quant Electron 40, 301–306 (2008). https://doi.org/10.1007/s11082-007-9177-2
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DOI: https://doi.org/10.1007/s11082-007-9177-2