Abstract
We consider two GaAs-based laser materials emitting at telecommunication wavelengths, namely the dilute nitride (GaIn)(NAs) as well as Ga(AsSb), and model their optical properties by including scattering and dephasing on a microscopic basis. The theory shows an excellent agreement with experiment without the inclusion of fit parameters such as phenomenological scattering times. By careful comparison of measurements and computations, one can extract controversial bandstructure parameters such as the band offset.
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Thränhardt, A., Bückers, C., Schlichenmaier, C. et al. Microscopic simulation of semiconductor lasers at telecommunication wavelengths. Opt Quant Electron 38, 1005–1009 (2006). https://doi.org/10.1007/s11082-006-9056-2
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DOI: https://doi.org/10.1007/s11082-006-9056-2