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Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

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Abstract

We report a 2D simulation of electrical and optical characteristics of green color InGaN/GaN multiple quantum well light-emitting diodes by APSYS software with a dot-in-well model. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered in the LED experimental data analysis. Simulation results based on the quantum dot model are in better agreement with the experimental data than those based on the purely quantum well model, indicating that the quantum dot spontaneous emission and the non-equilibrium quantum transport play important roles in the InGaN/GaN multiple quantum well light-emitting diodes.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China

    C. S. Xia, W. D. Hu, C. Wang, Z. F. Li, X. S. Chen & W. Lu

  2. Crosslight Software Inc., 206-3993 Henning Drive, Burnaby, BC, V6C 6P7, Canada

    Z. M. Simon Li & Z. Q. Li

Authors
  1. C. S. Xia
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  2. W. D. Hu
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  3. C. Wang
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  4. Z. F. Li
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  5. X. S. Chen
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  6. W. Lu
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  7. Z. M. Simon Li
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  8. Z. Q. Li
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Correspondence to W. Lu.

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Xia, C.S., Hu, W.D., Wang, C. et al. Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects. Opt Quant Electron 38, 1077–1089 (2006). https://doi.org/10.1007/s11082-006-9029-5

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  • DOI: https://doi.org/10.1007/s11082-006-9029-5

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