Abstract
Optical properties of the InGaN violet and ultraviolet multiple-quantum-well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated and compared. The simulation results indicate that the double-quantum-well laser structure with a peak emission wavelength of 385–410 nm has the lowest threshold current. The characteristic temperature of the single-quantum-well laser structure increases as the peak emission wavelength increases. The triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic temperature when the peak emission wavelength is larger than 405 nm.
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Yen, SH., Chen, BJ. & Kuo, YK. Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes. Opt Quant Electron 38, 1029–1037 (2006). https://doi.org/10.1007/s11082-006-9016-x
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DOI: https://doi.org/10.1007/s11082-006-9016-x