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Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

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Abstract

Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or high-temperature operation.

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  1. Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź ul., Wólczańska 219, 93-005, Łódź, Poland

    Robert P. Sarzała & Włodzimierz Nakwaski

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  1. Robert P. Sarzała
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  2. Włodzimierz Nakwaski
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Correspondence to Włodzimierz Nakwaski.

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Sarzała, R.P., Nakwaski, W. Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities. Opt Quant Electron 38, 325–337 (2006). https://doi.org/10.1007/s11082-006-0035-4

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  • DOI: https://doi.org/10.1007/s11082-006-0035-4

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