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An analytical model of P +InAsSbP/n 0-InAs/n +-InAs single heterojunction photodetector for 2.4–3.5 μm region

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Abstract

In this paper, a surface illuminated InAsSbP/InAs photodetector has been analyzed for operation in 2.0–3.5 μm wavelength region. The influence of different dark current components on the resistance-area product (RA) of the photodetector has been estimated theoretically. The results obtained on the basis of the model are found to be in good agreement with the experimental data reported by others. The high value of detectivity of the device at room temperature will make it attractive for use in optical gas sensor.

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Authors and Affiliations

  1. Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, India

    R.K. Lal & P. Chakrabarti

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  1. R.K. Lal
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  2. P. Chakrabarti
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Lal, R., Chakrabarti, P. An analytical model of P +InAsSbP/n 0-InAs/n +-InAs single heterojunction photodetector for 2.4–3.5 μm region. Optical and Quantum Electronics 36, 935–947 (2004). https://doi.org/10.1007/s11082-004-3112-6

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  • DOI: https://doi.org/10.1007/s11082-004-3112-6

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