Abstract
Motivated by problems arising in semiconductor-device modeling, this paper is concerned with a singularly perturbed semilinear reaction-diffusion problem with a boundary turning point. It is proved that the problem has a unique solution with two boundary layers. Based on the estimates of the derivatives of the solution, a numerical method is proposed which uses the classical finite-difference discretization on a Bakhvalov-type mesh. Second-order accuracy, uniform with respect to the perturbation parameter, is proved in the maximum norm. Numerical results are presented in support of the theoretical ones.
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The second author’s work was supported by the Ministry of Science and Technological Development of the Republic of Serbia under grant 144006.
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Vulanović, R., Teofanov, L. A uniform numerical method for semilinear reaction-diffusion problems with a boundary turning point. Numer Algor 54, 431–444 (2010). https://doi.org/10.1007/s11075-009-9344-6
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DOI: https://doi.org/10.1007/s11075-009-9344-6
Keywords
- One-dimensional reaction-diffusion problem
- Semilinear boundary-value problem
- Boundary turning point
- Singular perturbation
- Finite-difference method
- Layer-adapted mesh