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Exploring thickness-dependent Cu/TiOx:Cu/Ti memristor and chaotic dynamics in a real fifth-order memristive circuit

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Abstract

Memristors with nonlinear characteristics can replace passive devices to construct nonlinear and chaotic circuits, which gives new challenges and opportunities to traditional circuits. This paper presents a series of Cu-doped Cu/TiOx:Cu/Ti physical memristors with various TiO2 thicknesses by controlling the sputtering time, whose characteristics and mathematical models are explored based on the switching mechanism and v–i characteristics. To better characterize the effect of the physical memristor, a fifth-order memristive circuit is built based on it. With its dimensionless equations, complex coexisting behaviors of multiple kinds of attractors, including stable point attractors, limit cycles, and chaotic attractors, are numerically revealed. In addition, a hardware circuit with physical memristors is implemented, from which multiple coexisting attractors are conveniently captured, verifying the numerical simulations.

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Data availability

All data included in this study are available upon request by contact with the corresponding author.

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Acknowledgements

We acknowledge the help of the college of mechanical and electronic engineering, Shandong University of Science and Technology.

Funding

This work was supported by National Natural Science Foundation of China (Grant Nos. 62371274 and 61973200), Natural Science Foundation of Shandong Province (Grant No. ZR2023MF004), and Qingdao Natural Science Foundation (Grant No. 23-2-1-151-zyyd-jch). This work was also supported by the Elite Project of Shandong University of Science and Technology.

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  1. College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, China

    Yue Deng, Shaoyan Li, Peng Zhang, Fang Yuan & Yuxia Li

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  1. Yue Deng
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  2. Shaoyan Li
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Correspondence to Yuxia Li.

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Deng, Y., Li, S., Zhang, P. et al. Exploring thickness-dependent Cu/TiOx:Cu/Ti memristor and chaotic dynamics in a real fifth-order memristive circuit. Nonlinear Dyn 112, 1377–1394 (2024). https://doi.org/10.1007/s11071-023-09032-2

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