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A S-type bistable locally active memristor model and its analog implementation in an oscillator circuit

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Abstract

In this paper, a S-type memristor with tangent nonlinearity is proposed. The introduced memristor can generate two kinds of stable pinched hysteresis loops with initial conditions from two flanks of the initial critical point. The power-off plot verifies that the memristor is nonvolatile, and the DC V-I plot shows that the memristor is locally active with the locally active region symmetrical about the origin. The equivalent circuit of the memristor, derived by small-signal analysis method, is used to study the dynamics near the operating point in the locally active region. Owing to the bistable and locally active properties and S-type DC V-I curve, this memristor is called S-type BLAM for short. Then, a new Wien-bridge oscillator circuit is designed by substituting one of its resistances with S-type BLAM. It finds that the circuit system can produce chaotic oscillation and complex dynamic behavior, which is further confirmed by analog circuit experiment.

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Funding

This study was funded by Hunan Provincial Natural Science Foundation of China (Nos. 2019JJ40109, 2020JJ4337, 2020JJ4341); Science and Technology Program of Hunan Province (No. 2019TP1014); Science and Research Creative Team of Hunan Institute of Science and Technology (No. 2019-TD-10).

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  1. Key Laboratory of Hunan Province On Information Photonics and Freespace Optical Communications, College of Physics and Electronics, Hunan Institute of Science and Technology, 414006, Yueyang, China

    Chunlai Li, Haodong Li, Wenwu Xie & Jianrong Du

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  1. Chunlai Li
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  2. Haodong Li
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  4. Jianrong Du
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Correspondence to Chunlai Li.

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Li, C., Li, H., Xie, W. et al. A S-type bistable locally active memristor model and its analog implementation in an oscillator circuit. Nonlinear Dyn 106, 1041–1058 (2021). https://doi.org/10.1007/s11071-021-06814-4

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