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Studies of structural, dielectric, electrical, and optical properties of CaBiLaNbVO9 for electronic device application

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Abstract

The solid-state reaction route created the lead-free dielectric material CaBiLaNbVO9 at a high temperature. The polycrystalline compound belongs to a monoclinic crystal structure having dimensions a = 10.6738 Å, b = 10.4488 Å, c = 7.1793 Å, and V = 798.04 Å3. The grain size is calculated to be 1.1029 µm. The doping of La3+ at the Bi-site and divalent cation Ca2+ substituted at site-A and Nb5+, V5+ in the site-B of ABO3 has considerably modified the structural, dielectric, and electrical conduction mechanism. The study of ac conductivity (frequency-temperature characteristics) shows CBH (correlated barrier hopping) and NSPT (non-overlapping small polaron tunneling) conduction mechanisms. Non-Debye type relaxation has been observed using impedance analysis. The modulus and impedance study have been used to confirm the short-range order of charge carriers. The average transmittance of the compound is about 82–84%, and absorption is in the range of 0.1–1.0% in the visible area applicable for transparent conductive oxide. The energy band gap is 2.73 eV. The analysis of the resistive and capacitive properties indicates the material is an electronic component for the creation of devices.

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Acknowledgements

The authors would thank S ‘O’ A University, Bhubaneswar, for XRD facilities and OUAT, Bhubaneswar, India, for FTIR, UV-vis, and SEM characterizations.

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Authors and Affiliations

  1. Department of Physics, T.N.B. College, T.M. Bhagalpur University, Bhagalpur, 812007, Bihar, India

    Nitin Kumar & Umakant Prasad

  2. Multifunctional Materials Research Lab, Department of Physics, SOA University, BBSR, Bhubaneswar, 751030, India

    Sudhansu Sekhar Hota, Debasish Panda & R. N. P. Choudhary

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  1. Nitin Kumar
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  2. Sudhansu Sekhar Hota
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Correspondence to Umakant Prasad.

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The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work. In addition to the above, we have no conflict of interest with anybody except Paweł E. Tomaszewski.

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Highlights

• The CaBiLaNbVO9 complex compound was synthesized by the solid-state reaction method and crystallized in the monoclinic symmetry.

• The surface micrograph shows that grains of various sizes and shapes have been uniformly scattered throughout the surface.

• High dielectric permittivity and minimal loss correspond to the device fabrication.

• The UV-visible spectrum analysis gives band gap energy of 2.73 eV showing the material used in optoelectronic devices.

• Negative temperature coefficient response relevant for NTC-thermistor and temperature-based sensors.

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Kumar, N., Hota, S.S., Panda, D. et al. Studies of structural, dielectric, electrical, and optical properties of CaBiLaNbVO9 for electronic device application. J Nanopart Res 26, 10 (2024). https://doi.org/10.1007/s11051-023-05914-z

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