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Carrier dynamics of CdS/MoS2 heterostructure nanocrystal films affected by annealing effect

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Abstract

2D transition metal dichalcogenides (TMDCs) nanocrystals and related semiconductor–metal heterostructures are promising new materials for efficient opto-electrical conversion because of their unique physical and chemical properties. The design and optimization of such materials require the understanding of exciton and charge carrier dynamics. The illumination-dependent carrier dynamics of CdS/MoS2 heterostructure nanocrystals (CdS/MoS2 HNCs) film is investigated by employing the voltage-current test, in which the CdS nanocrystals (NCs) film is used as a reference. The photocurrent performance of carriers in the CdS/MoS2 HNCs is 70 times higher than that in CdS NC film, owing to the excellent interfacial hole transfer from the CdS component to the monolayer MoS2 in CdS/MoS2 HNCs, which effectively reduces the bulk and surface charger recombination. It means that the remaining electron in CdS component after hole transfer plays an important role in the final photocurrent performance. The annealing effect also plays a positive role in the photocurrent performance of nanocrystal film for CdS/MoS2 HNC and CdS NC film. In addition, the transient absorption test is also used to exclude the possibility of interfacial electron transfer. The final results suggest that the construction of nano-heterojunction can affect the carrier dynamics of nanomaterials and enhance light responsiveness, which is conductive to the design and application of photovoltaic devices in the future.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 11774122), the National Science Fund for Young Scholars (No. 11904123), and the National Natural Science Foundation of China (No.21573094, 11574112, and 61575079).

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Authors and Affiliations

  1. Femtosecond Laser laboratory, Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, People’s Republic of China

    Xue Lou, Lianfei Yao, Liangyu Wang, Xiaochun Chi, Wenyan Wang, Ning Sui, Hanzhuang Zhang, Lingyun Pan & Yinghui Wang

  2. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, People’s Republic of China

    Wen Xu

  3. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, People’s Republic of China

    Qiang Zhou

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  1. Xue Lou
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  2. Lianfei Yao
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Lou, X., Yao, L., Wang, L. et al. Carrier dynamics of CdS/MoS2 heterostructure nanocrystal films affected by annealing effect. J Nanopart Res 23, 74 (2021). https://doi.org/10.1007/s11051-021-05179-4

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