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Catalyst-free, tunable doping content of graphitic-N in arc-discharged graphene via gas and solid nitrogen sources and their formation mechanisms

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Abstract

Facile, cost-effective, and catalyst-free synthesis of graphitic-nitrogen (graphitic-N) doping in arc-discharged graphene has been achieved via a gas (N2) nitrogen source. The N-doped graphene sheets are mainly of 2–5 layers. According to the growth mechanisms of the cathode-part (deposit) graphene during the arcing process, N2 exhibits a varying capability to form the graphitic-N doping. When N2 acts as the nitrogen source, the cathode-part deposit is mainly consist of graphitic-N graphene sheets. The content of the nitrogen atom is calculated to be ~ 2.88 at%. However, when melamine is used as a nitrogen source, the atomic percentage (AP) of graphitic-N doping is almost equal to the pyridinic- and pyrrolic-N doping in the cathode-part deposit. Based on the findings, a new growth mechanism of graphitic-N doping in arc graphene is rationally proposed. The electrochemical impedance spectroscopy (EIS) results suggest that the graphite-N doping on the graphene can decrease the electron transfer resistance (Rct) and have better electrical conductivity than the normal N-doped graphene (N-NDG).

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Funding

This work was financially supported by the Natural Science Foundation of Shannxi Province and the Doctoral Research Assistant Foundation of Xi’an Jiaotong University.

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Authors and Affiliations

  1. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049, China

    Yanli Nan, Bo Li & Xiaolong Song

  2. SKLMBM & Institute for Chemical Physics & Department of Chemistry, School of Science, Xi’an Jiaotong University, Xi’an, 710049, China

    Bo Li & Xiaojing Zhang

Authors
  1. Yanli Nan
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  2. Bo Li
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  3. Xiaojing Zhang
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  4. Xiaolong Song
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Correspondence to Xiaolong Song.

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Nan, Y., Li, B., Zhang, X. et al. Catalyst-free, tunable doping content of graphitic-N in arc-discharged graphene via gas and solid nitrogen sources and their formation mechanisms. J Nanopart Res 20, 274 (2018). https://doi.org/10.1007/s11051-018-4375-3

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